3D Bonded Semiconductor Die Structure for Dense SoIC Packaging
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving smaller and more creative packaging techniques for System-on-Integrated-Circuit (SoIC) components to meet demands for miniaturization, higher speed, greater bandwidth, and lower power consumption.
Innovation Solution
A method for fabricating semiconductor dies involving the formation of conductive pillars and conductive barrier layers through deposition and planarization processes, followed by wafer sawing to create singulated semiconductor dies, and then bonding these dies in a stacked configuration with encapsulation and redistribution layers to form a semiconductor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If repeated reductions in minimum feature size are implemented, then integration density improves, but manufacturing complexity and difficulty increase
Solution Approach 1:
The patent transitions from planar 2D integration to 3D stacked integration using SiC interposer technology. Multiple semiconductor dies are vertically stacked and interconnected through the SiC interposer, enabling higher integration density without further reducing minimum feature size in the lateral dimension. This dimensional shift resolves the contradiction by achieving greater quantity of integrated components without proportionally increasing manufacturing complexity at the same scale.
Solution Approach 2:
The SiC interposer serves as an intermediary substrate that facilitates complex interconnections between multiple semiconductor dies. It provides through-silicon via (TSV) structures, redistribution layers, and bonding interfaces that simplify the overall manufacturing process compared to direct die-to-die stacking. The interposer mediates the complexity by centralizing interconnection functions in a dedicated intermediate layer.
2Volume of moving object
If miniaturization is pursued to meet demand for smaller components, then component size reduces, but structural integrity and reliability become more difficult to maintain
Solution Approach 1:
By moving to 3D stacking architecture, the patent achieves miniaturization in the lateral footprint while maintaining structural integrity through vertical load paths. The SiC interposer provides mechanical support and stress distribution across the stacked dies, preventing the structural weaknesses that would result from further lateral miniaturization.
Solution Approach 2:
The patent employs a composite structure combining multiple semiconductor dies with a SiC interposer substrate. SiC provides superior mechanical strength, thermal conductivity, and structural stability compared to traditional organic substrates. This composite architecture maintains reliability while enabling smaller overall package size through vertical integration.
3Quantity of substance
If higher integration density is achieved through feature size reduction, then more components fit in given area, but power consumption and heat generation increase
Solution Approach 1:
The 3D stacked architecture reduces lateral current travel distances by enabling vertical signal paths through TSVs and redistribution layers. This shortens interconnect lengths and reduces resistive power losses, allowing higher integration density without proportionally increasing power consumption.
Solution Approach 2:
The SiC interposer provides exceptional thermal conductivity to efficiently conduct heat away from densely integrated components. This thermal management capability enables higher integration density by preventing heat accumulation that would otherwise increase power consumption and reduce reliability.
4Productivity
If 3D stacked configuration with SiC interposer is implemented, then integration density and performance improve, but manufacturing process complexity increases
Solution Approach 1:
The manufacturing process is segmented into distinct modular stages: separate fabrication of semiconductor dies, independent preparation of SiC interposer with TSVs and redistribution layers, and controlled bonding/stacking operations. This segmentation allows each module to be optimized independently and simplifies process control compared to monolithic fabrication.
Solution Approach 2:
The SiC interposer is prepared in advance with pre-formed TSVs, barrier layers, and redistribution patterns before die stacking. This preliminary action enables precise alignment and reduces manufacturing complexity during the final assembly stage, as the interposer serves as a pre-configured template for interconnections.
Data Source
AI summary
A semiconductor structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The second semiconductor die is bonded to the first bonding structure of the first semiconductor die. The first bonding structure includes a first dielectric layer, a second dielectric layer covering the first dielectric layer, and first conductors embedded in the first dielectric layer and the second dielectric layer, wherein each of the first conductors includes a first conductive barrier layer covering the first dielectric layer and a first conductive pillar disposed on the first conductive barrier layer, and the first conductive pillars are in contact with the second dielectric layer.