3D Semiconductor Bonding Structure for Dense Die Stacking
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Solution Overview
Problem
The semiconductor industry faces challenges in further increasing circuit density due to limitations in shrinking minimum feature size and manufacturing difficulties in stacking and bonding multiple IC dies in three-dimensional integrated circuits (3D ICs).
Innovation Solution
A manufacturing method involving front-to-back and front-to-front bonding interfaces is developed, where semiconductor wafers are bonded using bonding vias and dielectric layers, with dummy features to improve bonding process uniformity and reduce manufacturing complexity, allowing for the formation of reliable semiconductor structures with enhanced performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but process limitations make it difficult to continue shrinking
Solution Approach 1:
The patent transitions from two-dimensional planar integration to three-dimensional vertical stacking by bonding multiple IC dies together. This dimensional change allows continued increase in integration density without further shrinking minimum feature size, as components are arranged in multiple layers stacked vertically rather than only in a single plane.
2Quantity of substance
If multiple IC dies are stacked and bonded together to increase circuit density, then integration density improves, but manufacturing challenges increase
Solution Approach 1:
The patent divides the semiconductor structure into multiple discrete IC dies that are separately fabricated and then bonded together. Each die can be independently manufactured and tested, allowing for modular assembly. This segmentation approach simplifies the overall manufacturing process by breaking down the complex task of creating high-density circuits into manageable stages of die fabrication, testing, and bonding.
Solution Approach 2:
The patent performs preliminary fabrication and testing of individual IC dies before bonding them together. This includes completing all necessary circuit formation, interconnect patterning, and electrical testing on each die separately while it is still attached to its carrier substrate. By completing these actions beforehand, the actual bonding process becomes simpler and more reliable, reducing manufacturing complexity.
3Quantity of substance
If IC dies are bonded together in 3D structure, then integration density increases, but manufacturing yield and reliability become more difficult to maintain
Solution Approach 1:
The patent employs self-aligned bonding techniques where corresponding features on adjacent dies automatically align during the bonding process without requiring complex external alignment mechanisms. The dies are bonded in a self-service manner where the bonding process itself ensures proper positioning and electrical connection, reducing the risk of misalignment and bonding defects that could compromise reliability.
Data Source
AI summary
A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes top, bottom, and middle tiers. The bottom tier includes a first interconnect structure overlying a first semiconductor substrate, and a first front-side bonding structure overlying the first interconnect structure. The middle tier interposed between and electrically coupled to the top and bottom tiers includes a second interconnect structure overlying a second semiconductor substrate, a second front-side bonding structure interposed between the top tier and the second interconnect structure, and a back-side bonding structure interposed between the second semiconductor substrate and the first front-side bonding structure. A bonding feature of the second front-side bonding structure includes a first bonding via in contact with the second interconnect structure, a first bonding contact overlying the first bonding via, and a barrier layer interface between a bottom of the first bonding contact and a top of the first bonding via.