3D Capacitor Layout for Accurate ESR Modeling and Noise Reduction
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Solution Overview
Problem
Semiconductor devices operating at lower voltages experience noise that affects signal transmission characteristics, leading to challenges in noise reduction, particularly due to the limitations of existing high-volume capacitors in peripheral circuits.
Innovation Solution
A capacitor design for semiconductor devices that includes a lower electrode layer, multiple upper electrode layers, dielectric layers with storage nodes, and line layers to measure equivalent series resistance (ESR), reflecting resistance changes caused by the routing pattern, and a distributed model circuit that simulates ESR by stacking these components in a three-dimensional structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If high-volume capacitors are formed in peripheral circuit regions for noise cancellation, then noise reduction capability is improved, but the resistance change caused by routing patterns is not accurately reflected in ESR measurements
Solution Approach 1:
The capacitor structure is segmented into multiple electrode layers (lower electrode layer, multiple upper electrode layers) with separate line layers for different functions. The line layers are divided into: (1) line layers for signal transmission connected to electrode terminals, and (2) line layers for ESR measurement connected to specific electrode portions. This segmentation allows independent optimization of noise cancellation performance and ESR measurement accuracy.
Solution Approach 2:
A distributed model circuit is introduced as an intermediary between the physical capacitor structure and the ESR measurement system. The model circuit includes resistors representing parasitic resistances of line layers and contacts, and capacitors representing electrode-capacitance. This intermediary model accurately reflects the routing pattern resistance changes and enables precise ESR measurements that account for the actual capacitor behavior in the semiconductor device.
2Measurement precision
If multiple line layers and contacts are added to accurately measure ESR reflecting routing pattern resistance, then measurement precision is improved, but device complexity increases
Solution Approach 1:
The line layers are designed with multi-functionality: they serve both as signal transmission paths connected to electrode terminals and as ESR measurement paths connected to specific electrode portions. The distributed model circuit also serves dual purposes: it accurately models the capacitor's ESR characteristics while simultaneously providing a practical measurement implementation. This multi-functionality reduces the need for separate dedicated measurement structures.
Solution Approach 2:
The invention transitions from a simple two-terminal capacitor to a multi-layered three-dimensional structure with electrode layers stacked vertically. This dimensional change allows multiple line layers to be positioned at different heights and connected to different electrode portions, enabling accurate ESR measurement without excessive planar complexity. The vertical stacking accommodates multiple measurement and signal paths within a compact footprint.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively reduces noise in semiconductor devices by accurately reflecting resistance changes in the ESR, improving signal transmission characteristics and reducing errors in circuit simulations and power distribution networks.
Implementation Method 1
a capacitor of a semiconductor device may include a lower electrode layer, a plurality of upper electrode layers disposed over the lower electrode layer in a third direction, a plurality of dielectric layers disposed between the lower electrode layer and each of the plurality of upper electrode layers
Implementation Method 2
a plurality of line layers disposed over at least one of the plurality of upper electrode layers, and configured to receive a voltage for measuring an equivalent series resistance (ESR)
Data Source
AI summary
A capacitor of a semiconductor device and a distributed model circuit for the same are disclosed. The capacitor includes a lower electrode layer, a plurality of upper electrode layers disposed over the lower electrode layer, a plurality of dielectric layers disposed between the lower electrode layer and each of the plurality of upper electrode layers, each dielectric layer configured to include a plurality of storage nodes, a plurality of line layers disposed over at least one of the plurality of upper electrode layers, and configured to receive a voltage for measuring an equivalent series resistance (ESR), and a plurality of contacts that electrically couple the plurality of line layers to the at least one of the plurality of upper electrode layers, wherein a resistance resulting from position information of the plurality of line layers and the plurality of contacts in a routing pattern corresponds to the ESR.