3D Silicon Capacitor Structure for High-Density Layer Stacking
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Solution Overview
Problem
Traditional multi-layer ceramic capacitors struggle to meet the demands of modern electronic systems requiring small volume and high capacity, with existing solutions either being costly or inefficient in capacitance density.
Innovation Solution
A 3D silicon capacitor structure is developed using advanced semiconductor processing techniques, featuring a laminated structure with multiple conductive and dielectric layers, where isolation trenches in odd-numbered conductive layers have a first overlap region and those in even-numbered layers have a second overlap region, allowing for increased capacitance density without the need for multiple photolithography steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional multi-layer ceramic capacitors are used, then manufacturing process is simple, but capacitance density is low and volume is large
Solution Approach 1:
The patent transitions from traditional planar capacitor structures to a three-dimensional stacked configuration with vertical conductive vias connecting multiple capacitor layers. This dimensional change enables significantly higher capacitance density by utilizing vertical space rather than only horizontal expansion, directly addressing the contradiction between capacitance density and volume.
Solution Approach 2:
The patent implements a nested structure where conductive vias are embedded within dielectric layers, and multiple capacitor layers are stacked within a compact footprint. The internal electrodes are nested within the ceramic substrate, allowing maximum capacitance within minimum volume, resolving the contradiction between high capacitance density and small volume.
2Quantity of substance
If multiple photolithography steps are used to increase capacitor layers, then capacitance density improves, but manufacturing complexity and cost increase
Solution Approach 1:
The patent segments the capacitor structure into modular repeating units of dielectric layers and conductive electrodes that can be stacked sequentially. Each layer pair forms an independent capacitor unit, allowing systematic increase in capacitance density through simple repetition of the same manufacturing steps without requiring complex multi-step photolithography processes.
Solution Approach 2:
The patent employs universal conductive via structures that serve multiple functions: electrical connection between layers, mechanical support, and alignment reference for subsequent layers. This multi-functionality reduces the need for additional specialized processing steps, maintaining manufacturing simplicity while achieving high capacitance density through stacking.
Data Source
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AI summary
Embodiments of the present application provide a capacitor and a manufacturing method therefor. The capacitor includes: a semiconductor substrate; a laminated structure including n conductive layers and m dielectric layer(s), the i-th conductive layer being provided with at least one i-th isolation trench, the (i+1)-th conductive layer being provided above the i-th conductive layer and in the at least one i-th isolation trench, isolation trenches in odd-numbered conductive layers having a first overlap region in a vertical direction, isolation trenches in even-numbered conductive layers having a second overlap region in the vertical direction, and the first overlap region not overlapping the second overlap region, where m, n, and i are positive integers, n≥2, and 1≤i≤n-1; at least one first external electrode electrically connected to all odd-numbered conductive layer(s) through a first conductive via structure provided in the second overlap region; and at least one second external electrode electrically connected to all even-numbered conductive layer(s) through a second conductive via structure provided in the first overlap region.