3D Capacitor Architecture for High Power Density in Limited Layout Space
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Solution Overview
Problem
Current capacitors in semiconductor devices have limited power density and information capacity due to restricted layout spaces in the backend interconnect structure, which is exacerbated by the thermal budget constraints and increasing demands of modern processors for higher power and frequency.
Innovation Solution
The development of three-dimensional capacitors with a corrugated structure and integration of high-efficiency solid-state electrolytes, enabling electric double layer capacitors or Redox faradaic reaction-based pseudocapacitors, which increase surface area and energy capacity, and can be vertically integrated into an interposer or processor backside, connected through power rails.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If capacitors are fabricated within the backend interconnect structure, then device integration is achieved, but layout space is limited leading to reduced capacitor capacity
Solution Approach 1:
The patent transitions from planar 2D capacitor layouts to three-dimensional vertical capacitor structures. Multiple capacitor units are stacked in the vertical dimension, allowing significant increase in capacitor capacity without occupying additional lateral layout space. This dimensional change resolves the contradiction by enabling high-capacity capacitors within the constrained backend interconnect area.
Solution Approach 2:
The patent implements nested capacitor units where multiple capacitor structures are contained within a shared footprint area. The capacitor units are arranged concentrically or in stacked configurations, effectively nesting functional elements to maximize space utilization. This nesting approach allows multiple capacitors to coexist in the limited backend interconnect space while maintaining individual capacitor performance.
2Area of stationary object
If conventional capacitor structures are used in limited layout spaces, then device size is reduced, but power density becomes insufficient
Solution Approach 1:
By stacking capacitor units vertically in three dimensions, the patent increases the effective capacitor area without increasing the device footprint. This vertical stacking enables higher power density within the same lateral dimensions, as the capacitance scales with the number of stacked units rather than being constrained to a single planar layer.
Solution Approach 2:
The patent employs composite electrode and dielectric material structures within the capacitor units to enhance energy density. High-k dielectric materials and optimized electrode compositions increase the capacitance per unit volume, thereby improving power density while maintaining compact device dimensions.
3Power
If capacitor capacity is increased to meet power density requirements, then more layout space is needed, but backend interconnect structure has limited space
Solution Approach 1:
The patent resolves this space-power density contradiction by exploiting the vertical dimension. Multiple capacitor units are stacked vertically within the same lateral footprint, enabling capacitor capacity scaling without proportional increases in layout area. This three-dimensional arrangement allows high power density to be achieved within the constrained backend interconnect space.
Solution Approach 2:
The patent merges multiple capacitor units into a single integrated three-dimensional capacitor structure. Shared interconnect elements and common support structures reduce the total space requirement compared to discrete capacitor implementations, enabling higher capacity within limited layout space while maintaining electrical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances power density and information storage capacity, allowing processors to operate at improved frequencies even on battery power without a wired connection, leveraging full processing power remotely.
Implementation Method 1
integration of high-efficiency solid-state electrolytes, enabling electric double layer capacitors
Implementation Method 2
integration of high-efficiency solid-state electrolytes, enabling Redox faradaic reaction-based pseudocapacitors
Data Source
AI summary
Embodiments herein describe techniques for a semiconductor device including a three dimensional capacitor. The three dimensional capacitor includes a pole, and one or more capacitor units stacked around the pole. A capacitor unit of the one or more capacitor units includes a first electrode surrounding and coupled to the pole, a dielectric layer surrounding the first electrode, and a second electrode surrounding the dielectric layer. Other embodiments may be described and/or claimed.