3D Capacitor Structure With Offset Support Openings for High Capacitance
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Solution Overview
Problem
As semiconductor devices become more integrated, there is a need for capacitors with sufficient capacitance within a limited area, which is challenging due to the limitations in electrode surface area and dielectric material properties.
Innovation Solution
The design involves a semiconductor device with a capacitor structure that includes multiple bottom electrodes and supporters with non-overlapping openings, forming separate lower and upper capacitor modules to enhance capacitance and reduce bending, allowing for increased open areas and improved structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the surface area of the electrode is increased to achieve sufficient capacitance, then the capacitance increases, but the area occupied in the limited space increases
Solution Approach 1:
The patent transitions from a planar capacitor structure to a three-dimensional stacked structure with multiple layers of electrodes and dielectrics. By stacking capacitor modules vertically, the effective electrode surface area is increased without proportionally increasing the planar footprint, thereby achieving higher capacitance within limited area.
Solution Approach 2:
The capacitor is divided into multiple discrete modules stacked vertically, with each module containing bottom electrodes, top electrodes, and dielectric layers. This segmentation allows for increased total capacitance through multiple parallel capacitor units while maintaining a compact overall structure.
2Quantity of substance
If the equivalent oxide thickness of the dielectric material is reduced to increase capacitance, then the capacitance increases, but the reliability and breakdown resistance decrease
Solution Approach 1:
The patent employs composite dielectric structures including high-k dielectric materials combined with oxide layers. This composite approach enables achieving high capacitance through increased dielectric constant rather than reduced thickness, thereby maintaining reliability and breakdown resistance while increasing capacitance.
3Quantity of substance
If a three-dimensional capacitor structure is formed to increase electrode surface area, then the capacitance increases, but the structural integrity and resistance to bending decrease
Solution Approach 1:
The patent combines multiple capacitor modules into a unified stacked structure where adjacent modules are integrated through shared electrodes and dielectric layers. This merging creates a rigid interconnected structure that resists bending while maintaining the high surface area necessary for high capacitance.
Solution Approach 2:
By extending the capacitor structure into the vertical dimension through stacking, the mechanical strength is enhanced through the distributed structure. The vertical stacking with multiple support points and interconnected layers provides greater rigidity and resistance to bending compared to a single-layer planar structure.
Data Source
AI summary
A capacitor includes a plurality of lower bottom electrodes, a lower supporter supporting the lower bottom electrodes and including a plurality of lower supporter openings, upper bottom electrodes formed on the lower bottom electrodes, respectively, and an upper supporter supporting the upper bottom electrodes and including a plurality of upper supporter openings, wherein the lower supporter openings and the upper supporter openings do not vertically overlap each other.