3D Capacitor Structure Using Recessed Electrodes for Higher Capacitance
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Solution Overview
Problem
Current semiconductor capacitor structures face challenges in effectively increasing capacitance value, as traditional designs do not adequately optimize the electrode area to enhance capacitance.
Innovation Solution
A capacitor structure is developed with a silicon material layer, a support frame layer having recesses and a through hole, and a first electrode layer that fills these recesses and cavities, increasing the electrode area and thereby enhancing capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating material is inserted between electrode plates to form a capacitor unit, then the capacitor structure is established, but the capacitance value is limited and cannot be effectively increased
Solution Approach 1:
The invention transitions from a conventional planar capacitor structure to a three-dimensional structure by forming recesses in the support frame layer and filling them with electrode material. This vertical dimensionality change allows the electrode layer to extend into the recesses, significantly increasing the effective electrode area and capacitance value without proportionally increasing the device footprint.
Solution Approach 2:
The electrode layer is nested within the recesses of the support frame layer, creating a hierarchical structure where the electrode material occupies the cavities formed by adjacent recesses. This nesting approach maximizes the use of available space and increases the electrode surface area within a compact structure.
2Reliability
If the electrode layer area is increased to boost capacitance, then the capacitance value improves, but the device area and complexity increase
Solution Approach 1:
Instead of expanding the electrode area horizontally, the invention utilizes the vertical dimension by forming deep recesses in the support frame layer. The electrode material fills these recesses, allowing the effective electrode area to increase while maintaining a compact device footprint. This dimensional transition enables high capacitance in a small area.
Solution Approach 2:
The support frame layer is designed with a porous-like structure containing multiple recesses and cavities. This porous architecture provides extensive surface area for electrode deposition within a compact volume, effectively increasing capacitance without proportionally increasing the device area.
Data Source
AI summary
A capacitor structure including a silicon material layer, a support frame layer, and a capacitor is provided. The support frame layer is disposed in the silicon material layer. The support frame layer has recesses. There is a cavity between two adjacent recesses. The support frame layer is located between the cavity and the recess. The support frame layer has a through hole directly above the cavity. The capacitor is disposed in the silicon material layer. The capacitor includes a first insulating layer and a first electrode layer. The first insulating layer is disposed on the support frame layer. The first electrode layer is disposed on the first insulating layer and fills the recess and the cavity.