3D Integrated Capacitor Structure With Rounded Pillars Against Leakage
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Solution Overview
Problem
Current three-dimensional integration technologies face challenges in achieving high-density integration of diverse components with efficient electrical connectivity and preventing issues like current leakage and capacitor collapse due to sharp corners in high-aspect-ratio structures.
Innovation Solution
The manufacturing process involves forming pillar-shaped capacitors with rounded corners and a layered structure of metallic, dielectric, and metallic sheaths, supported by an outer electrode layer, which enhances electrical connectivity and prevents current leakage by alleviating sharp corners and projected points.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If high-aspect-ratio structures are formed to achieve high-density integration, then integration density is improved, but current leakage and capacitor collapse occur due to sharp corners
Solution Approach 1:
The patent applies curvature by forming rounded corners at the top and bottom of high-aspect-ratio capacitor structures instead of sharp corners. This is achieved through selective etching processes that remove material at corner regions, creating curved surfaces that eliminate stress concentration points and prevent current leakage while maintaining the high-aspect-ratio geometry needed for high-density integration
2Quantity of substance
If high-aspect-ratio structures are formed to achieve high-density integration, then integration density is improved, but structural stability deteriorates due to capacitor collapse
Solution Approach 1:
The patent applies curvature by forming rounded corners at the top and bottom of high-aspect-ratio capacitor structures instead of sharp corners. This is achieved through selective etching processes that remove material at corner regions, creating curved surfaces that eliminate stress concentration points and prevent current leakage while maintaining the high-aspect-ratio geometry needed for high-density integration
Solution Approach 2:
The patent applies beforehand cushioning by forming a sacrificial mandrel structure with controlled dimensions and material properties before depositing capacitor materials. The mandrel provides mechanical support during the formation of high-aspect-ratio structures, preventing collapse before the final structure is complete. The mandrel is subsequently removed to leave the desired capacitor geometry
3Quantity of substance
If diverse components are integrated at wafer level to achieve high-density integration, then component density is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies merging by integrating multiple capacitor formation processes into a single unified wafer-level manufacturing sequence. Multiple capacitor structures with different geometries and materials are formed simultaneously using combined deposition, etching, and planarization steps, rather than processing each capacitor individually. This reduces manufacturing complexity while achieving high component density
Data Source
AI summary
A three-dimensional integrated structure and the manufacturing method(s) thereof are described. The three-dimensional integrated structure includes a substrate having conductive features therein, and a component array disposed over the substrate and on the conductive features. The component array includes a metallic material layer and capacitor structures separated by the metallic material layer. Each of the capacitor structures includes a first metallic pillar, a first dielectric sheath surrounding the first metallic pillar, a second metallic sheath surrounding the first dielectric sheath, and a second dielectric sleeve surrounding the second metallic sheath. The metallic material layer laterally encapsulates the capacitor structures.