3D Charge Generating Devices Using Wide Band-Gap Semiconductors
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Solution Overview
Problem
Traditional nuclear batteries face challenges such as low power conversion efficiency, small power output, and radiation damage to semiconductor devices, making them unsuitable for long-term, low-maintenance power supply in harsh environments like deep sea exploration, interplanetary missions, and medical implants.
Innovation Solution
The development of charge generating devices using wide band-gap semiconductor materials like SiC, GaN, and diamond, combined with a radioactive layer and scintillation layers, which form a 3D structure to enhance electron-hole pair collection and resist radiation damage, and incorporate a scintillator to improve power conversion efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If traditional nuclear batteries are used, then power supply is provided, but power conversion efficiency is low and power output is small
Solution Approach 1:
The patent transitions from traditional planar (2D) semiconductor structures to three-dimensional (3D) structures including nanowires, nanotubes, and quantum dots. This dimensional change increases the surface area and volume for charge generation and collection, thereby improving both power output and conversion efficiency by utilizing spatial dimensions more effectively
Solution Approach 2:
The patent employs composite material structures combining different semiconductor materials with varying band gaps (e.g., GaN, SiC, diamond) and integrates radioactive layers, scintillation layers, and conducting layers. These composite structures enable optimized charge generation, separation, and collection processes, simultaneously enhancing power output and energy conversion efficiency
2Reliability
If traditional semiconductor devices are used, then charge generation occurs, but radiation damage reduces device durability
Solution Approach 1:
The patent utilizes wide band-gap semiconductor materials (GaN, SiC, diamond) which have fundamentally different electrical and structural parameters compared to traditional silicon. These material parameter changes provide inherent resistance to radiation-induced defects, maintaining device reliability and durability in high-radiation environments while enabling charge generation
Solution Approach 2:
The patent introduces scintillation layers and radioactive layers as intermediary components between the radiation source and the semiconductor charge-generating elements. These intermediaries convert radiation into light or charge carriers in a controlled manner, protecting the semiconductor devices from direct radiation damage while still enabling charge generation
3Productivity
If 3D structures are implemented, then electron-hole pair collection is enhanced, but device complexity increases
Solution Approach 1:
The patent divides the semiconductor structure into discrete 3D elements such as individual nanowires, nanotubes, or quantum dots arranged in arrays. Each element acts as an independent charge-generating unit with its own collection pathways, simplifying the overall design while enhancing total electron-hole pair collection through increased surface area and optimized charge transport paths
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These devices achieve improved power conversion efficiency and increased durability, enabling reliable long-term operation in harsh conditions with enhanced power output and resistance to radiation damage.
Implementation Method 1
a radioactive layer disposed on at least a portion of the plurality of spaced-apart three-dimensional elements and the top surface such that the plurality of cavities and the top surface are substantially coated by the radioactive layer
Implementation Method 2
The charge generating devices can comprise a substrate having a top surface and a bottom surface; a plurality of spaced-apart three-dimensional elements disposed on the top surface of the substrate
Implementation Method 3
incorporate a scintillator to improve power conversion efficiency
Data Source
AI summary
Provided herein are charge generating devices and methods of making and use thereof. The charge generating devices comprise a substrate having a top surface; a plurality of spaced-apart three-dimensional elements disposed on the top surface of the substrate; and a plurality of cavities formed by the plurality of spaced-apart three-dimensional elements, the plurality of cavities being the area between the plurality of spaced-apart three-dimensional elements. The charge generating devices can further comprise a radioactive layer disposed on at least a portion of the plurality of spaced-apart three-dimensional elements and the top surface such that the plurality of cavities and the top surface are substantially coated by the radioactive layer. In some examples, the charge generating devices can comprise a radiation material and/or a scintillating material disposed within at least a portion of the plurality of cavities.