3D Contact Area Measurement for Semiconductor Structure Overlap
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current two-dimensional measurement techniques for contact cross sections between 3D structures in integrated semiconductor samples are limited by imprecision in sample preparation and difficulty in determining the exact position of contacts, leading to inaccurate measurements.
Innovation Solution
The method employs a 3D measurement technique using a dual beam device for cross-sectioning and imaging, allowing for precise determination of contact area size by obtaining cross-section images, performing image registration, and constructing a 3D model to analyze the relative overlap of 3D structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If 2D measurement techniques (SEM/TEM) are used to measure contact cross sections, then the measurement process is simpler, but the measurement precision deteriorates due to imprecise material removal and difficulty in locating exact contact positions
Solution Approach 1:
The patent transitions from 2D measurement techniques to 3D measurement by obtaining multiple cross-section images at different depths and reconstructing a 3D model. This dimensional change allows precise determination of contact area size without the limitations of material removal imprecision, as the 3D reconstruction maintains spatial relationships and enables accurate contact position identification throughout the volume.
Solution Approach 2:
The patent divides the contact area measurement into multiple depth levels by obtaining cross-section images at different z-positions. Each cross-section provides information about the contact at that specific depth, and by segmenting the measurement this way, the system achieves comprehensive 3D characterization of the contact geometry without requiring perfect 2D material removal.
2Ease of operation
If material is removed from above the contact area for SEM imaging, then the contact area becomes accessible for imaging, but the manufacturing precision deteriorates due to imprecise material removal affecting measurement accuracy
Solution Approach 1:
Instead of relying on precise 2D material removal to expose the contact area, the patent uses 3D cross-section imaging to access and measure the contact area. By imaging at multiple depths and reconstructing the 3D structure, the system can locate and measure contacts without requiring imprecise material removal, as the cross-sectional approach naturally reveals contact positions at different z-levels.
3Ease of operation
If material is removed from above and below the contact area for TEM imaging, then the contact area becomes accessible for transmission imaging, but the measurement precision deteriorates due to imprecise material removal and loss of localization structures
Solution Approach 1:
The patent uses 3D cross-section imaging to maintain localization information while making the contact area accessible. By acquiring images at multiple depths and reconstructing the 3D structure, the system preserves spatial context and can accurately locate contacts without removing material from below the contact area, which would destroy unique localization structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly enhances the accuracy of contact area size measurements, overcoming the limitations of 2D techniques and enabling precise analysis of contact areas and potential defects in semiconductor structures.
Implementation Method 1
obtaining the first and second cross section images includes subsequently removing a cross section surface layer of the integrated semiconductor sample with a focused ion beam
Data Source
AI summary
A method of determining a size of a contact area between a first 3D structure and a second 3D structure in an integrated semiconductor sample, includes the following steps: obtaining at least a first cross section image and a second cross section image parallel to the first cross section image, wherein obtaining the first and second cross section images includes subsequently removing a cross section surface layer of the integrated semiconductor sample using a focused ion beam to make a new cross section accessible for imaging, and imaging the new cross section of the integrated semiconductor sample with an imaging device; performing image registration of the obtained cross section images and obtaining a 3D data set; determining a 3D model representing the first 3D structure and the second 3D structure in the 3D data set; and determining a relative overlap of the first 3D structure with the second 3D structure based on the 3D model.