3D Semiconductor Contact Plug Layout for Alignment Stability
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Solution Overview
Problem
The integration degree of two-dimensional semiconductor devices has reached its limit, and three-dimensional semiconductor devices are needed to improve operational and structural reliability, but existing structures face challenges in aligning contact plugs accurately due to misalignment during manufacturing.
Innovation Solution
A semiconductor device with a stack of insulating and sacrificial layers, an interlayer insulating layer, and a contact plug with distinct central axes, where the contact plug is aligned using an insulating plug to ensure accurate placement and stability, including a first portion aligned with the insulating plug's central axis and a second portion tilted to expand beyond the plug's boundaries.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional contact plug alignment methods are used in three-dimensional semiconductor devices, then manufacturing simplicity is maintained, but alignment precision deteriorates due to misalignment during manufacturing
Solution Approach 1:
The patent introduces an insulating plug as an intermediary element between the contact plug and the substrate. The insulating plug includes a first portion and a second portion that provides a reference structure for alignment. The contact plug is aligned relative to the insulating plug rather than directly to the substrate, which serves as a mediator to improve alignment precision while maintaining manufacturing simplicity
Solution Approach 2:
The contact plug structure is segmented into multiple portions: the insulating plug with its first and second portions, and the contact plug itself. This segmentation allows each component to serve a specific function - the insulating plug provides alignment reference while the contact plug provides electrical connection, thereby improving overall alignment precision without excessive complexity
2Quantity of substance
If two-dimensional semiconductor device structures are used, then manufacturing simplicity is maintained, but integration degree deteriorates as it reaches its limit
Solution Approach 1:
The patent transitions from two-dimensional planar structures to three-dimensional vertical structures. The stack includes multiple alternating layers extending vertically, and the contact plug penetrates through multiple layers in the vertical dimension. This dimensional change enables higher integration density by utilizing the third dimension (vertical stacking) rather than expanding horizontally, thereby increasing the quantity of functional elements without proportionally increasing device area
Data Source
AI summary
A semiconductor device may include a stack including insulating layers and sacrificial layers alternately stacked, an interlayer insulating layer disposed on the stack, an insulating plug passing through the stack and the interlayer insulating layer, and a contact plug including a first portion extending between the stack and the insulating plug and having a first central axis, and a second portion extending between the interlayer insulating layer and the insulating plug and having a second central axis dislocated from the first central axis.