3D Contact Resistance Structure for Thermal-Stable Semiconductor Devices
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Solution Overview
Problem
Existing semiconductor devices face challenges in securing reliable contact with interconnections while minimizing thermal resistivity in resistance structures.
Innovation Solution
A semiconductor device design featuring a resistance structure with two conductive layers made of different materials, where the first resistance conductive layer and the second resistance conductive layer have opposite thermal resistance slopes, ensuring a composite thermal resistance of zero, and a three-dimensional contact configuration to enhance reliability and reduce thermal resistivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single-layer resistance structure is used, then the device complexity is reduced, but the contact reliability with interconnections deteriorates and thermal resistivity increases
Solution Approach 1:
The resistance structure is divided into multiple conductive layers (first resistance conductive layer and second resistance conductive layer) with different materials. This segmentation allows each layer to contribute differently to thermal management and electrical conduction, improving contact reliability while distributing thermal stress across multiple interfaces.
Solution Approach 2:
The patent employs composite material structure where the first resistance conductive layer and second resistance conductive layer are made of different materials with complementary properties. This composite approach enables optimization of both electrical resistance and thermal conductivity, achieving reliable contact while managing thermal resistivity effectively.
2Temperature
If a multi-layer resistance structure is used, then thermal resistivity is minimized through composite thermal resistance of zero, but the device complexity increases
Solution Approach 1:
The patent changes the material parameters of the conductive layers to achieve opposite thermal resistance slopes. By selecting materials with contrasting thermal resistance temperature coefficients, the composite structure achieves zero net thermal resistance change with temperature, effectively minimizing thermal resistivity effects.
Solution Approach 2:
The patent converts the potentially harmful effect of thermal resistance variations into a beneficial feature by using materials with opposite thermal resistance slopes. The temperature-induced resistance changes in one layer are compensated by opposite changes in another layer, transforming thermal instability into thermal stability.
3Reliability
If a three-dimensional contact configuration is implemented, then contact reliability is enhanced, but the manufacturing precision requirements increase
Solution Approach 1:
The patent transitions from planar two-dimensional contact to three-dimensional contact by having interconnection layers contact the resistance structure at multiple levels (bottom surface contacting first layer, side surface contacting second layer). This dimensional expansion increases contact area and reliability while distributing alignment requirements across multiple surfaces.
Solution Approach 2:
The interconnection layer is designed to nest within the resistance structure vertically, with the bottom surface of the interconnection layer contacting the first resistance conductive layer and the side surface contacting the second resistance conductive layer. This nested configuration maximizes contact area while maintaining compact geometry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves reliable contact and minimizes thermal resistivity, enhancing the stability and performance of semiconductor devices by maintaining consistent resistance values regardless of temperature fluctuations.
Implementation Method 1
the first resistance conductive layer and the second resistance conductive layer include different materials... ensuring a composite thermal resistance of zero
Data Source
AI summary
A semiconductor device includes: a lower structure; a base layer on the lower structure; a resistance structure including a first resistance conductive layer on the base layer and a second resistance conductive layer on the first resistance conductive layer, wherein the first resistance conductive layer and the second resistance conductive layer include different materials; an interlayer insulating layer on the resistance structure; and upper interconnection layers extending downwardly from an upper surface of the interlayer insulating layer. The upper interconnection layers are electrically connected to the resistance structure. Each of the upper interconnection layers includes a side surface and a bottom surface. The bottom surface of each of the upper interconnection layers is in contact with the first resistance conductive layer. A portion of the side surface of each of the upper interconnection layers is in contact with the second resistance conductive layer.