3D Semiconductor Deposition with Adsorption-Controlled Step Coverage
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Solution Overview
Problem
In semiconductor device manufacturing, achieving high step coverage on three-dimensional structures with high aspect ratios is challenging due to uneven material layer thickness, as the chemical material is consumed more on the upper portions, leading to reduced thickness on lower portions.
Innovation Solution
A method involving the formation of an adsorption control layer on the upper portions of three-dimensional structures, which reduces the adsorption of chemical materials, allowing for a controlled growth rate and thickness of material layers, ensuring sufficient thickness on lower portions by varying the growth rate and thickness of the material layer based on the adsorption control layer's properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If material layer is formed on upper portion of high-aspect-ratio 3D structure, then adsorption of chemical material occurs on upper portion, but thickness of material layer on lower portion is reduced
Solution Approach 1:
The patent applies local quality by forming an adsorption control layer with specific properties (different from both the 3D structure and the material layer) in the intermediate region. This layer has tailored adsorption characteristics that differ from the upper and lower portions, creating a gradient structure that controls material distribution locally to improve overall step coverage
Solution Approach 2:
The adsorption control layer acts as an intermediary between the 3D structure and the material layer. It mediates the interaction by controlling the adsorption of chemical materials, preventing excessive consumption on the upper portion while ensuring sufficient deposition on the lower portion, thus resolving the thickness uniformity issue
2Length of moving object
If aspect ratio of 3D structure increases, then vertical integration is improved, but step coverage is reduced
Solution Approach 1:
The patent segments the vertical structure into three distinct regions: the 3D structure base, the intermediate adsorption control layer, and the upper material layer. This segmentation allows each region to have optimized properties for its specific function, enabling high aspect ratio structures to achieve improved step coverage through the intermediate layer's controlled adsorption characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves step coverage by maintaining a higher growth rate and maximum thickness on lower portions of the structure, addressing the issue of reduced thickness on high-aspect-ratio structures, thereby enhancing the uniformity and effectiveness of material layer deposition.
Implementation Method 1
forming an adsorption control layer to cover an upper portion of the 3D structure
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming a three-dimensional (3D) structure on a substrate, forming an adsorption control layer to cover an upper portion of the 3D structure, and forming a material layer on the adsorption control layer and on a lower portion of the 3D structure that is not covered by the adsorption control layer, wherein a minimum thickness of the material layer on the adsorption control layer is less than a maximum thickness of the material layer on the lower portion of the 3D structure.