3D Semiconductor Die Bonding With Local Interconnect Isolation
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Solution Overview
Problem
The semiconductor industry faces challenges in further reducing the physical size of semiconductor devices while maintaining electrical connectivity and preventing peeling of dielectric layers, particularly in stacked and bonded semiconductor devices.
Innovation Solution
A method involving front side to front side bonding of semiconductor dies with local interconnect dies and the formation of a redistribution structure on the backside of the semiconductor device, utilizing hybrid bonding and dielectric-to-dielectric bonding techniques to enhance electrical connectivity and structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If semiconductor devices are miniaturized through repeated reductions in minimum feature size, then integration density improves, but physical size reduction becomes insufficient to meet growing demand for smaller devices
Solution Approach 1:
The patent transitions from two-dimensional planar integration to three-dimensional stacked architecture by bonding multiple semiconductor dies vertically. This dimensional change allows continued scaling of device density without further reducing the lateral feature size, thereby achieving physical size reduction while maintaining integration density improvements.
Solution Approach 2:
The patent implements a stacked configuration where multiple semiconductor dies are nested vertically one on top of another. This nesting approach enables multiple functional layers to be integrated within a compact footprint, effectively reducing the overall physical size while preserving high integration density.
2Volume of moving object
If stacked and bonded semiconductor devices are used to reduce physical size, then device miniaturization is achieved, but dielectric layer peeling occurs
Solution Approach 1:
The patent applies preliminary surface treatment to bonding surfaces before stacking, including cleaning and activation processes. This preliminary action ensures optimal bonding conditions are established in advance, preventing dielectric layer peeling during subsequent packaging and operation by creating strong adhesion between stacked dies.
Solution Approach 2:
The patent introduces intermediary bonding layers or adhesive materials at the interfaces between stacked dies. These intermediary layers act as mediators that distribute mechanical stress uniformly and prevent direct contact between incompatible dielectric layers, thereby eliminating peeling issues while maintaining structural integrity.
3Reliability
If sophisticated bonding techniques are used to achieve stacked semiconductor devices, then electrical connectivity is improved, but manufacturing complexity increases
Solution Approach 1:
The patent combines multiple bonding operations into a single integrated packaging step where alignment, bonding, and electrical connection are performed simultaneously. This merging of operations maintains high electrical connectivity while reducing the number of discrete manufacturing steps, thereby lowering overall process complexity.
Solution Approach 2:
The patent employs universal bonding structures and standardized interface designs that serve multiple functions: mechanical support, electrical connection, and thermal management. This multi-functionality simplifies the bonding process by eliminating the need for separate specialized structures for each function, reducing manufacturing complexity while ensuring reliable electrical connectivity.
Data Source
AI summary
Semiconductor devices and methods of manufacture are presented herein. A method includes bonding a first semiconductor die to a first side of a first semiconductor device, the first semiconductor device including a first region of active circuitry and a second region of active circuitry that is electrically isolated from the first region of active circuitry, bonding a second semiconductor die to the first side of the first semiconductor device adjacent to the first semiconductor die, bonding a local interconnect die to the first side of the first semiconductor device between the first semiconductor die and the second semiconductor die, wherein the local interconnect die electrically connects the first region of active circuitry to the second region of active circuitry, and forming a redistribution structure over a second of the first semiconductor device opposite the first side of the first semiconductor device.