3D Die Integration With Embedded IO Hub for Fine-Pitch Interconnects
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor packaging technologies face challenges in achieving high-density, fine-pitch die-to-die interconnections with low Bump Thickness Variation (BTV) and cost-effective yields, while also optimizing signal transmission efficiency and real estate usage within the package substrate.
Innovation Solution
Embedding an IO hub within a glass layer of a multi-die integrated circuit package enables 3D heterogeneous integration with direct IO Hub to die communication, using hybrid bonding or solderless connections, and laser-based patterning for interconnects, which reduces BTV and enhances power delivery.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If routing within the package substrate (e.g., redistribution layers) is used to facilitate die-to-die communications, then the IO hub can be embedded within the package substrate, but signal transmission efficiency is limited and valuable real estate within the package substrate is consumed
Solution Approach 1:
The patent transitions from planar routing within the package substrate to three-dimensional vertical interconnections using TSVs. The IO hub is embedded within the package substrate at a vertical position between the first and second dies, enabling direct vertical signal paths through TSVs that bypass the need for lateral redistribution layer routing. This dimensional change from 2D to 3D interconnection significantly improves signal transmission efficiency and reduces substrate space consumption.
2Manufacturing precision
If embedded bridges are used to enable high density die-to-die connections, then connection density increases, but cumulative Bump Thickness Variation (BTV) increases and manufacturing cost and yield suffer
Solution Approach 1:
The patent introduces an IO hub as an intermediary component embedded within the package substrate that mediates between multiple dies. Instead of direct die-to-die bridging that accumulates BTV, the IO hub serves as a central intermediary point that receives signals from multiple dies through TSVs and redistributes them. This intermediary approach maintains high connection density while reducing cumulative BTV by consolidating interconnection points.
3Quantity of substance
If multiple bridges are embedded to connect dies at finer bump pitches, then interconnection density increases, but the cost of embedding increases and yields suffer
Solution Approach 1:
The IO hub embedded within the package substrate serves multiple functions simultaneously: it acts as an interconnection hub for multiple dies, provides signal routing, enables power distribution, and facilitates communication between dies at fine bump pitches. This multi-functional intermediary component replaces the need for multiple separate embedded bridges, reducing manufacturing complexity and cost while maintaining high interconnection density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for efficient, high-density die-to-die connections with improved power delivery and reduced manufacturing costs, while minimizing signal transmission limitations and preserving valuable substrate space.
Implementation Method 1
laser-based patterning for interconnects
Data Source
AI summary
In one embodiment, an integrated circuit device includes a first layer having input/output (IO) hub circuitry to interconnect a plurality of integrated circuit dies, and a second layer having a plurality of integrated circuit dies electrically connected to the IO hub circuitry. The first layer may include glass, and the IO hub circuitry may be in a die embedded within the first layer. The integrated circuit dies may be electrically connected to the IO hub circuitry through an interposer.


