3D Die Stacking Structure With Variable TSV Hybrid Bonding
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current three-dimensional (3D) integration technologies face challenges in achieving high-density interconnects and efficient stacking of device dies while maintaining structural robustness and active area flexibility.
Innovation Solution
The proposed solution involves a 3D stacking structure that includes multiple dies stacked and connected through hybrid bonding, with through-substrate vias (TSVs) of varying critical dimensions to optimize alignment and bonding, and a redistribution layer for electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If through-substrate vias (TSVs) of varying critical dimensions are used to optimize alignment and bonding, then manufacturing precision and reliability are improved, but device complexity and process difficulty increase
Solution Approach 1:
The patent applies local quality by varying the critical dimensions of TSVs at different locations within the stacking structure. Different TSVs have different diameters optimized for their specific positioning requirements, allowing precise alignment control at each bonding interface while adapting to local geometric constraints of the multi-die stack.
2Quantity of substance
If multiple dies are stacked and connected through hybrid bonding, then interconnect density and volume integration are improved, but structural robustness and bonding reliability become more challenging to maintain
Solution Approach 1:
The patent employs hybrid bonding that combines different bonding mechanisms and materials. The bonding interfaces utilize complementary metal oxide semiconductor (CMOS) compatible materials and processes, integrating multiple bonding approaches to achieve both high density and reliable mechanical/electrical connections across multiple die stacks.
Solution Approach 2:
The patent segments the interconnection structure into multiple tiers of TSVs with varying dimensions. This segmentation allows each bonding interface to be independently optimized, with smaller TSVs for precise alignment at certain interfaces and larger TSVs for robust mechanical support at others, thereby maintaining bonding reliability while achieving high interconnect density.
3Adaptability or versatility
If flexible layout designs and increased active areas are allowed, then production yield and design adaptability are improved, but maintaining structural robustness becomes more difficult
Solution Approach 1:
The patent transitions from planar interconnection to three-dimensional stacking, adding the vertical dimension to the interconnect architecture. This dimensional change allows flexible layout designs and increased active areas on each die while maintaining structural robustness through the vertical stacking and bonding interfaces that provide mechanical support and electrical connectivity across layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the production yield and reliability of 3D stacking structures by allowing for flexible layout designs and increased active areas, while maintaining structural robustness through efficient bonding and interconnects.
Implementation Method 1
bonding film covering the semiconductor substrate and the metallization structures
Implementation Method 2
bonding the second through die vias respectively with the first through die vias
Data Source
AI summary
A stacking structure including a first die, a second die stacked on the first die, and a third die and a fourth die disposed on the second die. The first die has a first metallization structure, and the first metallization structure includes first through die vias. The second die has a second metallization structure, and second metallization structure includes second through die vias. The first through die vias are bonded with the second through die vias, and sizes of the first through die vias are different from sizes of the second through die vias. The third and fourth dies are disposed side-by-side and are bonded with the second through die vias.