3D DRAM Capacitor Structure for High Density
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Solution Overview
Problem
Conventional DRAM cell capacitors hinder reductions in size and increases in storage density due to limitations in feature spacing and fabrication costs, making it challenging to achieve higher feature density in memory devices.
Innovation Solution
The proposed solution involves capacitor structures with first electrodes vertically extending through an isolation material, a second electrode horizontally intervening between laterally-neighboring first electrodes, and a dielectric structure horizontally and vertically intervening between the second electrode and the first electrodes, facilitating increased feature density and performance in memory devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional capacitor configurations are used in DRAM cells, then the device structure is simple to manufacture, but the spacing between laterally-neighboring DRAM cells cannot be reduced, limiting storage density
Solution Approach 1:
The patent transitions from conventional planar capacitor arrangements to a three-dimensional configuration where a second electrode horizontally intervenes between laterally-neighboring first electrodes. This vertical stacking combined with horizontal positioning creates a multi-dimensional structure that reduces the lateral footprint of each capacitor, enabling closer spacing of DRAM cells and increased storage density without excessive complexity
2Quantity of substance
If feature dimensions are reduced to increase integration density, then storage capacity increases, but fabrication precision requirements become more stringent and costs increase
Solution Approach 1:
The patent merges multiple capacitor elements into a shared structure where a single second electrode horizontally intervenes between multiple laterally-neighboring first electrodes. This consolidation reduces the number of discrete features that must be precisely fabricated and positioned, thereby reducing manufacturing precision requirements while increasing overall feature density and integration capacity
3Area of stationary object
If conventional capacitor arrangements are used, then fabrication processes are straightforward, but the spacing between DRAM cells cannot be reduced to increase density
Solution Approach 1:
The patent segments the capacitor structure into distinct vertical and horizontal components: first electrodes vertically extending through isolation material, a second electrode horizontally intervening between these first electrodes, and dielectric structures positioned at specific locations. This segmentation allows each component to be fabricated using standard processes while the combined configuration achieves reduced DRAM cell area without complicating the overall manufacturing approach
Data Source
AI summary
An apparatus comprises first electrodes vertically extending through an isolation material, a second electrode horizontally intervening between two or more of the first electrodes laterally neighboring one another, and a dielectric structure horizontally and vertically intervening between the second electrode and the two or more of the first electrodes. Additional apparatuses, memory devices, electronic systems, and a method of forming an apparatus are also described.