3D DRAM Stack Layout for Bandwidth Scaling and Thermal Relief

The patent transitions from two-dimensional planar memory architectures to three-dimensional stacked memory structures. Multiple memory dies are stacked vertically and interconnected through silicon vias (TSVs), enabling significant increases in memory capacity and bandwidth without proportionally increasing the footprint area. This vertical stacking approach allows the system to scale memory capacity by adding more layers in the third dimension while maintaining efficient thermal characteristics compared to expanding in the planar direction.

The patent introduces through silicon vias (TSVs) as intermediary structures that penetrate through the entire thickness of memory dies to establish vertical interconnections. These TSVs serve as mediators between different memory layers, enabling data and power signals to traverse through the stacked structure. By using TSVs as standardized intermediary components, the system achieves high memory capacity scaling while managing the complexity of three-dimensional interconnections through a systematic via-based approach rather than more complex feedthrough structures.

The patent creates a universal memory package architecture that combines the advantages of both standard DRAM packages and HBM structures. The stacked memory design with TSV interconnections can be integrated into existing standard DRAM package formats, maintaining compatibility with conventional manufacturing processes and packaging infrastructure. Simultaneously, the three-dimensional stacking provides HBM-level bandwidth scaling capabilities. This multi-functional approach allows the same basic structure to serve both as a drop-in replacement for standard packages and as a high-performance memory solution.