3D III-V Semiconductor Emitters With Top Quantum Wells for Wavelength Control
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Solution Overview
Problem
Existing optoelectronic devices with three-dimensional semiconductor elements face challenges in controlling the shape and wavelength of active areas, particularly for green or red light emission, and are difficult to produce at an industrial scale and low cost.
Innovation Solution
A method involving MOCVD for forming wire-shaped semiconductor elements and RPCVD, MBE, or HVPE for creating active areas on the top of these elements, allowing precise control of the quantum well formation and crystalline planes to achieve desired wavelengths, enabling industrial-scale production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If high proportion of additional III compound (indium) is introduced to achieve green or red light emission, then the wavelength of emitted radiation increases, but it becomes difficult to incorporate the additional III compound into the semiconductor structure
Solution Approach 1:
The active area is divided into multiple quantum wells with different indium compositions arranged in sequence along the growth direction. Each quantum well has a specific indium proportion tailored to emit at a desired wavelength, allowing the structure to achieve green and red light emission by segmenting the active region into compositionally distinct zones rather than attempting uniform high-indium incorporation throughout
Solution Approach 2:
Different regions of the active area are assigned different indium compositions localized to specific quantum wells. The indium proportion varies locally across the structure, with higher indium content in quantum wells designated for red/green emission and lower indium content in other regions, enabling wavelength control through spatially varying material composition
2Ease of manufacture
If conventional MOCVD is used for growing both semiconductor elements and active areas, then the manufacturing process is simple and cost-effective, but precise control of active area shape and quantum well formation is difficult
Solution Approach 1:
A barrier layer made of III-V compound is introduced as an intermediary structure between the semiconductor element and the active area quantum wells. This barrier layer serves as a template and confinement structure that enables precise control of quantum well formation, shape, and composition while maintaining compatibility with standard MOCVD manufacturing processes
3Manufacturing precision
If multiple manufacturing methods are used to achieve precise wavelength control, then the desired wavelengths can be achieved, but the manufacturing complexity and cost increase
Solution Approach 1:
The invention achieves wavelength control by varying the indium composition parameter and quantum well thickness parameter within the MOCVD process, rather than switching to different manufacturing methods. By precisely controlling these material parameters during a single MOCVD run, the process maintains simplicity while achieving the desired spectral characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control over the wavelength and shape of active areas, facilitating the production of optoelectronic devices capable of emitting a range of colors, including red, green, and blue, at a lower cost and higher efficiency.
Implementation Method 1
forming, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound
Implementation Method 2
forming by remote plasma chemical vapor deposition, RPCVD
Implementation Method 3
by molecular-beam epitaxy, MBE
Implementation Method 4
by hydride vapor phase epitaxy, HVPE
Data Source
AI summary
A method for manufacturing an optoelectronic device including forming, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and including a top, and forming by remote plasma chemical vapor deposition, RPCVD, or by molecular-beam epitaxy, MBE, or by hydride vapor phase epitaxy, HVPE, for each semiconductor element, an active area only on said top including at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.