3D Flash Memory Oxide Channel Structure for Lower Leakage
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Solution Overview
Problem
Conventional three-dimensional flash memory devices experience high leakage current due to the use of poly-silicon channel layers, which hinders memory integration and miniaturization, and increasing the number of string selection lines to mitigate this issue compromises the degree of integration.
Innovation Solution
The use of an oxide semiconductor material for the channel layer and the formation of a region corresponding to the ground selection line with single crystal silicon through epitaxial growth, allowing for improved leakage current characteristics and embedding a peripheral circuit, while maintaining or enhancing the degree of integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If poly-silicon channel layer is used in conventional three-dimensional flash memory, then the device structure is simple and easy to manufacture, but the leakage current is high which hinders memory integration and miniaturization
Solution Approach 1:
The patent changes the material parameter of the channel layer from poly-silicon to oxide semiconductor material. This material substitution fundamentally alters the electrical properties, reducing leakage current by several orders of magnitude while maintaining compatibility with existing manufacturing processes. The oxide semiconductor channel layer provides superior electrical characteristics compared to poly-silicon, directly resolving the leakage current issue.
Solution Approach 2:
The patent employs a composite structure combining oxide semiconductor material for the channel layer with conventional materials for other components. This composite approach leverages the low leakage current特性 of oxide semiconductors while maintaining the proven reliability of conventional flash memory structures, achieving improved performance without complete redesign.
2Reliability
If the number of string selection lines is increased to mitigate leakage current, then the leakage current is reduced, but the degree of integration is compromised
Solution Approach 1:
The patent changes the material parameter of the channel layer from poly-silicon to oxide semiconductor material. This material substitution fundamentally alters the electrical properties, reducing leakage current by several orders of magnitude while maintaining compatibility with existing manufacturing processes. The oxide semiconductor channel layer provides superior electrical characteristics compared to poly-silicon, directly resolving the leakage current issue.
Solution Approach 2:
The patent employs a composite structure combining oxide semiconductor material for the channel layer with conventional materials for other components. This composite approach leverages the low leakage current特性 of oxide semiconductors while maintaining the proven reliability of conventional flash memory structures, achieving improved performance without complete redesign.
3Reliability
If oxide semiconductor material is used for the channel layer, then the leakage current is reduced and memory integration is promoted, but the manufacturing process becomes more complex
Solution Approach 1:
The patent changes the material parameter of the channel layer from poly-silicon to oxide semiconductor material. This material substitution fundamentally alters the electrical properties, reducing leakage current by several orders of magnitude while maintaining compatibility with existing manufacturing processes. The oxide semiconductor channel layer provides superior electrical characteristics compared to poly-silicon, directly resolving the leakage current issue.
Solution Approach 2:
The patent introduces a specific formation process for the oxide semiconductor channel layer that acts as an intermediary step between conventional poly-silicon fabrication and the desired low-leakage performance. This intermediary process enables the integration of oxide semiconductor material using modified existing techniques rather than requiring entirely new manufacturing methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces leakage current and promotes memory integration and miniaturization by utilizing an oxide semiconductor material for the channel layer and forming a silicon-based region for the ground selection line, thereby improving the overall performance and efficiency of the three-dimensional flash memory.
Implementation Method 1
the channel layer is formed of an oxide semiconductor material
Implementation Method 2
the formation of a region corresponding to the ground selection line with single crystal silicon through epitaxial growth
Data Source
AI summary
A three-dimensional flash memory for improving leakage current and a substrate are disclosed. The three-dimensional flash memory comprises: a string extending in one direction on the substrate, wherein the string includes a channel layer extending in the one direction and a charge storage layer extending in the one direction so as to surround the channel layer; at least one selection line vertically connected to an upper end or a lower end of the string; and a plurality of word lines positioned above or below the at least one selection line and vertically connected to the string, wherein the channel layer is formed of an oxide semiconductor material.