3D Fuse Component Structure for Compact Semiconductor Antifuses
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Solution Overview
Problem
Antifuses in semiconductor devices occupy a large area, which is a challenge as semiconductor devices become more highly integrated, requiring smaller and more efficient fault-tolerant solutions.
Innovation Solution
A three-dimensional (3D) fuse component structure is developed, featuring a fuse dielectric layer extending into an active region and a gate metal layer surrounded by the dielectric layer, allowing for increased overlapping perimeter without occupying additional area, reducing breakdown voltage and enhancing the probability of successful fusing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional antifuse structure is used, then fault tolerance function is achieved, but area consumption is large
Solution Approach 1:
The patent transitions from a planar (2D) antifuse structure to a three-dimensional (3D) structure by forming a recess region into the substrate and placing the dielectric layer and gate metal layer within this vertical space. This dimensional change allows the fuse component to achieve the same fault tolerance function while occupying significantly less surface area, directly resolving the contradiction between reliability and area consumption.
2Reliability
If the overlapping perimeter between active region and gate metal layer is increased, then breakdown voltage is reduced, but area consumption increases
Solution Approach 1:
By utilizing the vertical dimension through the recess region structure, the patent enables increased overlapping perimeter between the active region and gate metal layer without proportionally increasing surface area. The 3D configuration allows the gate metal layer to wrap around or extend along the walls of the recess, achieving longer interaction length with the active region while maintaining compact footprint.
Solution Approach 2:
The dielectric layer is positioned within the recess region formed in the substrate, and the gate metal layer is surrounded by the dielectric layer, creating a nested configuration. This nesting arrangement maximizes the overlapping perimeter between conductive elements within a confined volume, reducing breakdown voltage without requiring additional surface area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The 3D structure significantly reduces area consumption and increases the overlapping perimeter between the active region and gate metal layer, lowering breakdown voltage and improving the probability of successful fusing, addressing the space constraints and integration needs of advanced semiconductor devices.
Implementation Method 1
The gate metal layer is configured to receive a voltage to change a resistivity between the gate metal layer and the active region
Data Source
AI summary
A semiconductor device with a fuse component is provided. The semiconductor device includes a substrate having an active region; a fuse dielectric layer disposed in the active region; and a gate metal layer disposed in the active region and surrounded by the fuse dielectric layer. The gate metal layer is configured to receive a voltage to change a resistivity between the gate metal layer and the active region.