3D Fuse Component Structure for Smaller Semiconductor Footprint
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Solution Overview
Problem
Antifuses in semiconductor devices occupy a large area, which becomes a challenge as semiconductor devices become more highly integrated, requiring smaller and more efficiently designed fuse components.
Innovation Solution
A fuse component with a three-dimensional (3D) structure is developed, featuring an active region with a first and second fuse dielectric layer and corresponding gate metal layers, where the first gate metal layer is electrically connected to the second gate metal layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a conventional planar fuse structure is used, then the manufacturing process is simple, but the area occupied by the fuse component is large
Solution Approach 1:
The patent transitions from a two-dimensional planar fuse structure to a three-dimensional structure by forming fuse components at different depths within the semiconductor substrate. Multiple fuse components are positioned at different vertical levels, allowing them to overlap in the planar view while being separated in the vertical dimension. This dimensional transition enables significantly reduced area occupation while maintaining functional independence of each fuse component.
2Area of stationary object
If the fuse component area is reduced for higher integration, then device integration increases, but the breakdown voltage control becomes more difficult
Solution Approach 1:
The patent applies local quality by creating fuse components with different geometrical characteristics at different locations and depths. Each fuse component can have tailored dimensions, shapes, and material compositions optimized for specific breakdown voltage requirements. The three-dimensional arrangement allows different regions of the substrate to host fuse components with locally optimized properties, enabling precise control of breakdown voltages despite reduced overall area.
Solution Approach 2:
The patent utilizes parameter changes by varying multiple parameters of the fuse components including depth position, lateral dimensions, dielectric layer thicknesses, and material compositions. These parameter variations enable independent control of breakdown voltages for different fuse components. The multi-dimensional design space provided by the 3D structure allows fine-tuning of electrical characteristics without increasing planar area occupation.
3Area of stationary object
If multiple fuse components are placed closer together to reduce area, then area consumption decreases, but the probability of successful fusion decreases
Solution Approach 1:
The patent resolves the conflict between area reduction and fusion reliability by exploiting the vertical dimension. Fuse components that appear close together in planar view are actually separated in the vertical direction, with different components positioned at different depths within the substrate. This vertical separation prevents electrical interference and crosstalk between adjacent fuse components while maintaining compact planar footprint, thereby preserving high probability of successful fusion even with high density arrangement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The 3D structure of the fuse component reduces area consumption and increases the probability of successful fusion by allowing for a longer overlapping perimeter without occupying additional space, thereby reducing breakdown voltage.
Implementation Method 1
a first gate metal layer and a second gate metal layer configured to receive a voltage to change a resistivity between the first gate metal layer and the active region
Data Source
AI summary
A fuse component and a semiconductor device and a semiconductor device having the fuse component are provided. The fuse component includes an active region having a surface, a first fuse dielectric layer extending from the surface of the active region into the active region, a first gate metal layer surrounded by the first fuse dielectric layer, a second fuse dielectric layer extending from the surface of the active region into the active region, and a second gate metal layer surrounded by the second fuse dielectric layer. The first gate metal layer is electrically connected with the second gate metal layer.