3D GAA FeRAM Structure for High Density Memory Scaling
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Solution Overview
Problem
The semiconductor industry faces challenges in scaling down memory devices while maintaining gate control and reducing short-channel effects, particularly with the integration of gate-all-around (GAA) devices, due to complexities in forming strain enhancement and source/drain formation in nanowire structures.
Innovation Solution
The development of a 3D GAA FeRAM structure using a ferroelectric phase of hafnium-oxide (HfO2) with a gate-all-around configuration, allowing for conformal layer deposition and improved control over crystal grains, enabling better electric field response and non-volatile memory performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional GAA fabrication methods are used, then gate control is improved, but manufacturing complexity increases due to challenges in forming strain enhancement and source/drain formation
Solution Approach 1:
The fabrication process is divided into distinct stages: forming sacrificial nanowire structures, depositing gate materials around them, removing sacrificial portions, and then forming source/drain regions. This segmentation allows each step to be optimized independently, reducing overall process complexity while maintaining gate control.
Solution Approach 2:
Sacrificial nanowire structures are formed and positioned before the gate structure is deposited. This preliminary action establishes the spatial framework for gate formation, enabling conformal deposition and simplifying subsequent manufacturing steps while ensuring proper gate-channel alignment.
2Area of moving object
If lateral device dimensions are reduced to scale down memory cells, then device size decreases, but manufacturing difficulty increases
Solution Approach 1:
The invention transitions from planar device scaling to three-dimensional gate-all-around structures. By wrapping the gate around the channel in multiple dimensions, effective gate control is maintained even as lateral dimensions are reduced, enabling continued device scaling without proportionally increasing fabrication difficulty.
Solution Approach 2:
The gate structure is nested around the channel region in a concentric arrangement, with the gate completely surrounding the channel on three sides. This nested configuration maximizes gate control efficiency while maintaining compact device footprints, allowing further miniaturization without sacrificing manufacturability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances memory device performance by improving dimension density and reducing variability, leading to more efficient charge storage and lower power consumption, while being compatible with CMOS processing.
Implementation Method 1
The development of a 3D GAA FeRAM structure using a ferroelectric phase of hafnium-oxide (HfO2)
Data Source
AI summary
Methods of fabricating a semiconductor devices are disclosed. The method include forming a transistor device in a first device region on the semiconductor device, and forming a memory device in a second device region on the semiconductor device, the memory device being connected to the transistor device. In some embodiments, forming the memory device includes forming a first bit line, forming a first word line connected to the first bit line, forming a plate line connected to the first word line and the first bit line, forming a second bit line connected to the plate line, and forming a second word line connected to the second bit line and the plate line.