3D Gas Manifold Layout for Precise CVD Flow Profile Control
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Solution Overview
Problem
Existing gas manifolds for chemical vapor deposition processes lack the precision and flexibility to deliver gases with controlled flow patterns, volumetric flow rates, velocities, temperatures, pressures, and molar ratios, which are essential for achieving uniform and high-quality film deposition.
Innovation Solution
The development of highly specialized gas manifolds fabricated using three-dimensional printing, which allows for precise control of gas flow properties by varying the cross-sectional area, shape, and direction of conduits, and incorporating features like gas heaters and ionization electrodes to create customized 3-dimensional gas flow profiles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional gas manifolds are used for chemical vapor deposition, then the system structure is simple and manufacturing is easy, but the precision and flexibility to control gas flow properties (flow patterns, volumetric flow rates, velocities, temperatures, pressures, and molar ratios) is insufficient
Solution Approach 1:
The gas manifold incorporates varying cross-sectional areas, shapes, and directions in different conduit regions to optimize local gas flow properties. This allows precise control of flow patterns, velocities, and temperatures at specific locations within the manifold while maintaining overall system functionality.
Solution Approach 2:
The invention transitions from traditional two-dimensional manifold layouts to three-dimensional conduit configurations with varying cross-sections and spatial orientations. This 3D approach enables simultaneous control of multiple gas flow parameters that cannot be achieved with planar designs.
2Manufacturing precision
If highly specialized gas manifolds with precise flow control are designed, then film deposition uniformity and quality improve, but manufacturing cost and time increase
Solution Approach 1:
The gas manifold design utilizes variations in conduit parameters including cross-sectional area, shape, and direction to control gas flow properties. By adjusting these geometric parameters during the design phase, precise flow control is achieved without requiring complex manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the creation of customized gas manifolds that can precisely control gas flow properties, leading to improved uniformity and quality of film deposition in chemical vapor deposition processes, while also reducing manufacturing costs and time.
Implementation Method 1
highly specialized gas manifolds that deliver precursor and process gases to a process chamber with multiple precise properties controlled simultaneously, such as flow patterns, volumetric flow rates, velocities, temperatures, pressures, gas ionization, and desired molar ratios between two or more mixed gases within the manifold
Implementation Method 2
process gases with controlled flow patterns, volumetric flow rates, velocities, temperatures, pressures
Implementation Method 3
gas ionization, and desired molar ratios between two or more mixed gases within the manifold
Implementation Method 4
Chemical vapor deposition (CVD) involves directing one or more gases containing chemical species onto a surface of a substrate so that the reactive species react and form a film on the surface of the substrate
Data Source
AI summary
A gas manifold includes a gas inlet surface having a first and second gas input port and a gas outlet surface. A first internal chamber is coupled to the first gas input port. A first plurality of gas conduits, each including an input coupled to the first internal chamber and an outlet at the gas outlet surface where a direction of at least one of the conduits in the first plurality of gas conduits relative to the gas outlet surface is different. A second internal chamber is coupled to the second gas input port and is isolated from the first internal chamber. A second plurality of gas conduits, each including an input coupled to the second internal chamber and an outlet at the gas outlet surface. A direction of at least one of the conduits in the second plurality of gas conduits relative to the gas outlet surface is different. Directions of at least some of the gas conduits in the first and second plurality of gas conduits relative to the gas outlet surface can be selected to provide a desired gas flow pattern proximate to the gas outlet surface.