3D Gate Interconnect Structure for Higher-Density Semiconductor Layout
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to reduce the volume occupied by interconnect structures, increase their density, and improve the process window, especially as critical dimensions in semiconductor components continue to shrink.
Innovation Solution
The semiconductor structure incorporates an interconnect structure with a first sub-structure connected to the substrate and a second sub-structure protruding from the first, connected to the top of the gate structure. This design is achieved through a manufacturing method involving the formation of a gate structure, a dielectric layer, and the precise formation of openings and interconnect structures using etching and polishing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If traditional interconnect structures are used, then the manufacturing process is simpler, but the volume occupied by interconnect structures is larger and density is lower
Solution Approach 1:
The interconnect structure is divided into multiple segments: a first interconnect substructure extending from the substrate, and a second interconnect substructure extending from the gate structure. This segmentation allows each substructure to be optimized independently, reducing overall volume while maintaining functionality.
Solution Approach 2:
The interconnect structure transitions from a planar two-dimensional layout to a three-dimensional configuration with vertical components. The first and second interconnect substructures extend in different spatial dimensions, enabling compact integration and reduced footprint without excessive complexity.
2Manufacturing precision
If interconnect structure volume is reduced, then density increases, but manufacturing precision requirements increase
Solution Approach 1:
The first interconnect substructure is formed in advance during the substrate processing stage, before the gate structure is fully assembled. This preliminary formation allows subsequent steps to focus only on forming the second substructure, reducing overall manufacturing complexity while achieving high precision through staged processing.
Solution Approach 2:
A dielectric layer serves as an intermediary between the first and second interconnect substructures. This intermediary layer provides precise spacing and alignment references, enabling high-precision formation of the compact interconnect structure while maintaining manufacturing efficiency through standardized deposition processes.
Data Source
AI summary
A semiconductor structure includes: a substrate; a gate structure on the substrate; and an interconnect structure including a first interconnect sub-structure and a second interconnect sub-structure, where the second interconnect sub-structure protrudes from the first interconnect sub-structure. The first interconnect sub-structure is connected with the substrate, and the second interconnect sub-structure is connected with a top of the gate structure.