3D Nonvolatile Memory Gate Stack Supporters for Defect Prevention
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Solution Overview
Problem
Existing three-dimensional nonvolatile memory devices face challenges in reducing gate electrode resistance and preventing process defects, which affect their performance and reliability.
Innovation Solution
The proposed solution involves a nonvolatile memory device design with gate electrodes stacked on a semiconductor substrate, where supporters made of dielectric or semiconductor material penetrate the gate electrodes, reducing resistance and preventing defects by maintaining spacing between layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If gate electrodes are made thinner to increase storage density, then integration density is improved, but gate electrode resistance increases
Solution Approach 1:
The patent employs composite gate electrode structures combining multiple materials (e.g., polysilicon with metal layers, or different semiconductor materials) to achieve both thin profile for high density and low resistance for reliable operation. The composite structure allows optimization of each material's properties to balance density and conductivity requirements.
Solution Approach 2:
The patent modifies gate electrode parameters including material composition, layer thickness distribution, and doping concentrations to simultaneously reduce overall thickness while maintaining or reducing resistance. By changing these parameters, the electrode achieves both high integration density and acceptable electrical performance.
2Reliability
If supporters are added to penetrate gate electrodes, then process defects are prevented, but device complexity increases
Solution Approach 1:
The supporters serve multiple functions: they provide mechanical support during fabrication, maintain spacing between stacked structures, and act as etch stop layers or alignment references. This multi-functionality justifies their addition by delivering several benefits simultaneously rather than requiring separate structures for each function.
Solution Approach 2:
The supporters act as intermediary elements between the substrate and upper structures, facilitating the fabrication process by providing a stable reference and spacing mechanism. They mediate the interaction between different fabrication steps, enabling precise positioning and reducing process variability.
Data Source
AI summary
A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.