3D Semiconductor Gate Stack With Stepped Pad Regions
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Solution Overview
Problem
Current three-dimensional semiconductor devices face challenges in increasing their degree of integration, particularly in stacking gate structures vertically to enhance performance and efficiency.
Innovation Solution
A three-dimensional semiconductor device design featuring a stacked structure with gate patterns arranged in a stepped configuration, including upwardly and downwardly stepped regions, which allows for increased vertical stacking of gates, thereby improving integration density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If gate structures are stacked vertically to increase integration density, then the degree of integration is improved, but the structural complexity increases
Solution Approach 1:
The gate structure is divided into multiple discrete gate patterns (first gate pattern, second gate pattern, third gate pattern, fourth gate pattern) stacked at different heights. Each gate pattern can be independently formed and controlled, allowing complex three-dimensional integration while maintaining manageable manufacturing processes through sequential patterning steps
Solution Approach 2:
The patent transitions from planar two-dimensional gate arrangements to three-dimensional vertical stacking. Gate patterns are positioned at different heights (first height level, second height level, third height level, fourth height level) along the vertical direction, enabling increased integration density by utilizing the third dimension for device architecture
2Quantity of substance
If multiple gate patterns are stacked in the vertical direction, then integration capabilities are enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The method performs preliminary patterning actions to define pad regions and gate patterns at specific height levels before subsequent stacking operations. By pre-establishing reference structures and alignment markers at each level, the process ensures precise vertical registration of multiple gate patterns during fabrication
Solution Approach 2:
Different regions of the device exhibit locally optimized characteristics: pad regions are positioned at specific heights for electrical connection, while gate patterns are stacked at varying intervals to optimize both integration density and manufacturability. This localized variation in stacking configuration allows tailored precision requirements for different functional areas
Data Source
AI summary
A three-dimensional semiconductor device includes a first gate group on a lower structure and a second gate group on the first gate group. The first gate group includes first pad regions that are: (1) lowered in a first direction that is parallel to an upper surface of the lower structure and (2) raised in a second direction that is parallel to an upper surface of the lower structure and perpendicular to the first direction. The second gate group includes second pad regions that are sequentially raised in the first direction and raised in the second direction.