3D Groove Capacitor Structure for Higher Capacitance Density
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Solution Overview
Problem
Current semiconductor capacitors face challenges in maximizing capacitance value per unit area, as conventional designs do not effectively increase the electrode area, limiting their performance.
Innovation Solution
A semiconductor structure is developed with a groove in the substrate for the electrode layer and dielectric layer, where the electrode layer has a greater depth and width, and a T-shape or grid shape, allowing for increased area and capacitance, integrated with a manufacturing method that includes shallow trench isolation and dry etching processes, eliminating the need for additional masks and integrating with DRAM component processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the electrode layer depth is increased to increase capacitance value per unit area, then the capacitance value per unit area is improved, but the manufacturing complexity increases
Solution Approach 1:
The electrode layer is nested within the groove structure, with the dielectric layer surrounding portions of the electrode layer. This nesting arrangement increases the effective capacitance volume within the same footprint without requiring additional manufacturing steps or masks, as the groove and layered structures are formed through standard semiconductor processing sequences.
Solution Approach 2:
The invention transitions from a planar capacitor structure to a three-dimensional structure by forming a groove in the substrate and placing the electrode layer and dielectric layer within this groove. This vertical dimensionality change increases the capacitance value per unit area by utilizing the depth of the groove rather than only the surface area.
2Length of stationary object
If additional masks are used to form deeper electrode layers, then the electrode layer depth is improved, but the manufacturing cost increases
Solution Approach 1:
The groove structure serves multiple functions: it defines the capacitor region, provides the depth for the electrode layer, and acts as a containment structure for the dielectric layer. This multi-functionality is achieved through existing semiconductor manufacturing processes that form grooves for other purposes, eliminating the need for additional masks or specialized processing steps.
Solution Approach 2:
The groove is formed in advance before the electrode layer and dielectric layer are deposited. This preliminary action creates the three-dimensional structure needed for increased capacitance without requiring additional masking steps during the electrode formation process, thereby reducing manufacturing complexity and cost.
3Quantity of substance
If the electrode layer area is increased to increase capacitance, then the capacitance value is improved, but the device footprint increases
Solution Approach 1:
The capacitor structure utilizes the vertical dimension by forming the electrode layer and dielectric layer within a groove that extends into the substrate. This allows the capacitance value to be increased through the depth of the groove rather than by expanding the horizontal footprint, effectively moving the capacitance-generating volume from a two-dimensional plane to a three-dimensional space.
Data Source
AI summary
A semiconductor structure including a substrate, a first isolation structure and a capacitor is provided. The substrate includes a capacitor region. The first isolation structure is disposed in the substrate in the capacitor region. The capacitor is located in the capacitor region. The capacitor includes the substrate in the capacitor region, an electrode layer and a first dielectric layer. The electrode layer is disposed in the substrate in the capacitor region. The first dielectric layer is disposed between the electrode layer and the substrate and between the electrode layer and the first isolation structure. The first dielectric layer is in direct contact with the first isolation structure.