3D Hall Sensor With Integrated Vertical And Planar Elements
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Solution Overview
Problem
Current 3D Hall effect sensors face challenges with cross-interference and complex assembly processes, limiting their ability to sense magnetic fields in a single concentrated region and optimizing vertical and planar Hall elements for sensitivity.
Innovation Solution
A method involving the formation of p-type and n-type wells in a substrate with specific patterns and doping, along with shallow trench isolation and self-aligned silicidation, to create a 3D Hall element that senses magnetic fields in both perpendicular and in-plane directions with reduced cross-interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If 3-Axis Hall sensors are assembled from six building blocks, then 3D sensing capability is achieved, but the assembly process becomes too complicated and the sensor size increases
Solution Approach 1:
The patent combines multiple Hall sensing elements (both n-type and p-type) into a single integrated sensor structure that can sense magnetic fields in three dimensions. Instead of assembling six separate building blocks, the invention integrates vertical and planar Hall elements in one device, thereby achieving 3D sensing capability while significantly reducing assembly complexity
Solution Approach 2:
The integrated Hall sensor structure is designed to perform multiple sensing functions simultaneously - it can detect magnetic field components in all three spatial directions using a unified sensor architecture that incorporates both vertical and planar Hall effect sensing capabilities in one device
2Measurement precision
If multiple contact Hall sensor terminals are used, then sensing capability is enhanced, but cross-interference occurs as each terminal is influenced by at least two magnetic fields
Solution Approach 1:
The patent segments the sensing function into distinct vertical and planar Hall elements with separate sensing regions and independent output terminals. This segmentation ensures that each terminal responds primarily to a specific magnetic field component, thereby reducing cross-interference while maintaining comprehensive sensing capability
Solution Approach 2:
The invention implements local quality by creating specialized regions within the sensor - vertical Hall elements for sensing perpendicular magnetic field components and planar Hall elements for in-plane components. Each region is optimized for its specific sensing function, allowing precise measurement of different magnetic field orientations without significant cross-interference
3Device complexity
If one n-type element is used in 3D Hall sensors, then device simplicity is maintained, but design flexibility for optimizing both vertical and planar Hall elements is reduced
Solution Approach 1:
The patent employs asymmetric doping strategies by using both n-type and p-type Hall elements with different doping configurations. This asymmetry enables independent optimization of vertical and planar Hall elements for their respective sensing functions, significantly enhancing design flexibility and sensitivity optimization capabilities
Solution Approach 2:
The invention transitions from a single-type element design to a multi-type element architecture by incorporating both n-type and p-type Hall elements. This dimensional expansion in material type diversity enables independent tuning and optimization of vertical and planar sensing elements, providing enhanced design flexibility without substantially increasing overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables separate sensing of each magnetic field component in a single region, optimizing both vertical and planar Hall elements for improved sensitivity without requiring additional masks or tools, thus enhancing the performance of 3D Hall effect sensors.
Implementation Method 1
implanting n-type dopant in the first and second n-type wells; and implanting p-type dopant in the p-type well and the first n-type well
Implementation Method 2
The Hall effect is the production of a voltage difference (the Hall voltage) across an electrical conductor, transverse to an electric current in the conductor, and a magnetic field perpendicular to the current
Data Source
AI summary
A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type well; implanting n-type dopant in the first and second n-type wells; and implanting p-type dopant in the p-type well and the first n-type well.