3D Semiconductor Heat Sink Structure for Central Stack Cooling
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Solution Overview
Problem
Current package-level heat dissipation techniques for 3D stacked chip packages, such as those incorporating high bandwidth memory (HBM), are insufficient for effectively dissipating heat from densely stacked chips in the central region, particularly in 3D stacked integrated circuit (IC) packages.
Innovation Solution
A semiconductor assembly with a heat sink structure that includes a first semiconductor wafer, a memory stack, and a second semiconductor wafer, where the second wafer has a heat sink structure configured to dissipate heat through thermal conductive paths formed within the semiconductor assembly, utilizing edge regions of the wafers and memory stack for heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If thermal interface materials and cavities between dies are used for heat dissipation, then some heat can be dissipated, but the heat dissipation effectiveness is insufficient for densely stacked chips in the central region
Solution Approach 1:
The patent transitions from planar heat dissipation at the package level to three-dimensional heat dissipation by forming vertical thermal conductive paths through the stacked semiconductor dies using through-silicon vias (TSVs). This dimensional change allows heat to be conducted from the central region of densely stacked chips vertically to the heat sink structure, effectively addressing the heat dissipation insufficiency without increasing package structure complexity.
Solution Approach 2:
The patent introduces through-silicon via structures as intermediary thermal conductive paths between the densely stacked semiconductor dies and the heat sink. These TSVs act as thermal mediators that efficiently transfer heat from the central region of the stacked chips through the intermediate layers to the heat dissipation structure, resolving the heat dissipation effectiveness issue.
2Temperature
If the number of micro bumps is increased for heat dissipation, then heat transfer capacity may improve, but the solution is ineffective for central region heat dissipation and increases device complexity
Solution Approach 1:
The patent extracts the heat dissipation function from the micro bump structures and relocates it to dedicated through-silicon via thermal conductive paths. By separating the electrical connection function (micro bumps) from the thermal conduction function (TSVs), the patent achieves effective central region heat dissipation without increasing micro bump quantity or arrangement complexity.
Solution Approach 2:
The patent introduces through-silicon via structures as intermediary thermal conductive paths between the densely stacked semiconductor dies and the heat sink. These TSVs act as thermal mediators that efficiently transfer heat from the central region of the stacked chips through the intermediate layers to the heat dissipation structure, resolving the heat dissipation effectiveness issue.
3Ease of manufacture
If conventional package-level heat dissipation techniques are used, then manufacturing is relatively simple, but heat dissipation from densely stacked chips is insufficient
Solution Approach 1:
The patent segments the heat dissipation function into multiple independent through-silicon via thermal conductive paths distributed throughout the stacked semiconductor structure. This segmentation allows heat to be dissipated from multiple locations simultaneously, improving overall heat dissipation performance while maintaining manufacturing simplicity by using standard TSV fabrication processes.
Solution Approach 2:
The patent transitions from planar heat dissipation at the package level to three-dimensional heat dissipation by forming vertical thermal conductive paths through the stacked semiconductor dies using through-silicon vias (TSVs). This dimensional change allows heat to be conducted from the central region of densely stacked chips vertically to the heat sink structure, effectively addressing the heat dissipation insufficiency without increasing package structure complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The heat sink structure effectively dissipates heat generated by the semiconductor assembly through thermal conductive paths, improving heat management in 3D stacked chip packages.
Implementation Method 1
a heat sink structure configured to dissipate heat generated by the first semiconductor wafer and the memory stack through a first thermal conductive path and a second thermal conductive path within the semiconductor assembly
Data Source
AI summary
A semiconductor assembly is provided, which includes a first semiconductor wafer, a memory stack, and a second semiconductor wafer. The memory stack is bonded to the first semiconductor wafer, and the second semiconductor wafer is bonded to the memory stack. The second semiconductor wafer includes a heat sink structure configured to dissipate heat generated by the first semiconductor wafer and the memory stack through a first thermal conductive path and a second thermal conductive path within the semiconductor assembly.