3D IC Bonding Barrier Structure for Singulation Crack Containment

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Solution Overview

Problem

Chipping and cracking at the bonding interface of 3D ICs during singulation can lead to delamination and defects, which spread into deeper layers, necessitating a solution to mitigate these issues.

Innovation Solution

Incorporation of a chipping and delamination barrier (CDB) extending across or through the dies and bonding layers, composed of trenches filled with nitride and tetraethyl orthosilicate, to strengthen the 3D IC and prevent cracking and moisture ingress.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If mechanical saw tool singulation is used to separate 3D IC dies, then productivity is improved, but chipping and cracking occur at the bonding interface causing delamination and defects

Engineering Contradiction:
Improvesingulation efficiencyVSAvoidbonding interface integrity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

A chipping and delamination barrier (CDB) structure is formed at the bonding interface before the singulation process. This barrier acts as a cushioning layer that absorbs and distributes the mechanical stress during sawing, preventing stress concentration that would otherwise cause chipping and cracking at the bonding interface.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Solution Approach 2:

The CDB structure is formed using composite materials including trench structures filled with barrier materials such as oxide, nitride, or combinations thereof. These composite structures provide both mechanical reinforcement and stress distribution capabilities, enhancing the bonding interface's resistance to chipping and delamination during mechanical singulation.

Inventive Principle:
Principle #40Composite materials

2Reliability

If deeper layers of dies are made more robust to prevent defect spread, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improvedefect resistanceVSAvoiddie structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The CDB structure segments the bonding interface region by creating trench structures that divide and isolate potential defect propagation paths. By segmenting the interface into discrete barrier regions, the structure prevents defects from spreading laterally across the bonding interface while maintaining overall structural integrity without requiring complex modifications to the entire die stack.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20260018539A1Three-dimensional integrated circuit with a chipping and delamination barrier and its fabrication method
Publication Date: 2026.01.15 PSEMI CORP
  • US20260018539A1 patent drawing
  • US20260018539A1 patent drawing
  • US20260018539A1 patent drawing

AI summary

A three-dimensional integrated circuit (3D IC) including a first die, a second die, a bonding layer between the first and second dies. The bonding layer bonds the first and second dies. The 3D IC also includes a chipping and delamination barrier (CDB) extending across the first die, the bonding layer, and the second die.