3D IC Heat Exchange Channel Layout for Stacked Chip Cooling
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Three-dimensional (3D) IC modules face inadequate heat dissipation due to high power consumption and uneven heat distribution, leading to performance degradation and reliability issues, particularly in applications like edge computing and artificial intelligence.
Innovation Solution
A 3D IC module design featuring vertically stacked substrates with a conductive hole and trench in the topmost substrate, covered by a passivation layer to form a heat exchange channel, allowing for the flow of a heat dissipation medium to enhance thermal management without increasing module size or cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If 3D IC modules integrate multiple active components and logic chips to achieve high computational power, then computing performance is improved, but heat generation increases and heat dissipation becomes inadequate
Solution Approach 1:
The patent transitions from planar heat dissipation to three-dimensional heat exchange by forming heat exchange channels that extend vertically through the substrate thickness. This allows heat to be dissipated in the depth dimension rather than only laterally, significantly improving heat removal capability for high-power 3D IC modules with multiple stacked components.
Solution Approach 2:
The patent introduces fluid-based heat exchange by forming heat exchange channels that can accommodate heat dissipation media such as liquids or gases. The channels enable forced convection or natural circulation of the heat dissipation medium, providing efficient thermal management for high-power density applications.
2Power
If logic chips are incorporated into the same module to achieve high computational power, then computing ability is improved, but uneven heat dissipation occurs leading to performance degradation
Solution Approach 1:
The patent implements localized heat exchange channels positioned beneath specific high-power density regions such as logic chips and processors. The channel distribution and dimensions are optimized to match the thermal load profile, providing enhanced cooling precisely where heat generation is highest while maintaining uniform temperature distribution across the module.
Solution Approach 2:
The patent incorporates temperature sensing elements that monitor thermal conditions within the module and provide feedback to the heat dissipation system. This enables dynamic adjustment of cooling parameters to maintain optimal operating temperatures and prevent performance degradation under varying computational loads.
3Temperature
If heat exchange channels are formed in the substrate, then heat dissipation is improved, but the substrate structure becomes more complex
Solution Approach 1:
The patent combines the formation of heat exchange channels with existing substrate fabrication processes. The channels are integrated into the substrate manufacturing flow, sharing process steps such as patterning, etching, and filling with other substrate features, thereby minimizing additional process complexity while achieving effective heat dissipation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides improved heat dissipation capabilities, preventing excessive heat build-up and uneven heat distribution, thereby optimizing performance and reliability of the 3D IC module.
Implementation Method 1
a heat dissipation medium inlet and at least one heat dissipation medium outlet, which are configured to allow a heat dissipation medium to be introduced to the heat exchange channel through the heat dissipation medium inlet and discharged therefrom through the heat dissipation medium outlet
Implementation Method 2
the first passivation layer spans over and covers the trench to define a heat exchange channel
Data Source
AI summary
A three-dimensional (3D) integrated circuit (IC) module and a method of fabricating the 3D IC module are disclosed. In the 3D IC module, a conductive hole for connection with an internal specified metal layer and a trench arranged to avoid the conductive hole are formed in a topmost substrate of a semiconductor structure. A first passivation layer spans over and covers the trench, the first passivation layer and the trench together delimit a heat exchange channel. During operation of 3D IC module, a heat dissipation medium may be caused to flow through the heat exchange channel to facilitate heat dissipation. Thus, the 3D IC module has enhanced heat dissipation ability and is substantially immune from the problems of excessive heat build-up and uneven heat dissipation. This helps optimize performance and reliability of the 3D IC module. The method can be used to make such a 3D IC module.