3D IC Thermal Cooler with Fluid Channels and TSVs
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Solution Overview
Problem
In 3D ICs, existing cooling solutions often prioritize thermal performance over electrical performance, leading to suboptimal results due to the placement of high-power dies at the top of the stack and lower power dies below, which can hinder electrical connectivity and efficiency.
Innovation Solution
Incorporating a thermal cooling unit with fluid channels and through-silicon vias (TSVs) that allows for simultaneous thermal management and electrical connectivity, enabling the optimization of both thermal and electrical performance by routing signal and power leads through the thermal cooler unit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If high-power dies are placed at the top of the stack closest to the heatsink, then thermal performance is improved, but electrical performance deteriorates due to hindered electrical connectivity
Solution Approach 1:
The patent segments the cooling function by introducing dedicated thermal via holes that are electrically isolated from the electrical signal paths. The thermal via holes are filled with thermally conductive but electrically insulating material, separating the thermal management function from the electrical connectivity function. This allows high-power dies to be placed at the top for optimal cooling while electrical signals route through separate, optimized paths below.
Solution Approach 2:
The patent introduces an intermediary thermal management layer with thermal via holes that acts as a mediator between the high-power die and the heatsink. This intermediary structure provides a dedicated thermal pathway that does not interfere with electrical signal routing, allowing simultaneous optimization of both thermal and electrical performance.
2Ease of manufacture
If low-power dies are placed below high-power dies, then thermal management is simplified, but electrical connectivity and efficiency are hindered
Solution Approach 1:
The patent segments the via hole functions into electrical via holes for signal routing and thermal via holes for heat dissipation. This segmentation allows flexible die stacking arrangements where electrical connectivity is optimized through dedicated electrical pathways while thermal management is handled separately through thermally conductive via holes, enabling high-power dies to be positioned optimally without compromising electrical efficiency.
3Temperature
If restrictive die placement is enforced for cooling, then thermal requirements are met, but device complexity and design flexibility increase
Solution Approach 1:
The patent creates a universal via hole structure that serves dual purposes: electrical via holes for signal routing and thermal via holes for heat dissipation. This multi-functional via structure eliminates the need for restrictive die placement rules, as the thermal management system can accommodate any die power distribution pattern. The design becomes more flexible while maintaining effective thermal control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances overall system performance by effectively cooling the 3D IC structure while maintaining optimal electrical connections, improving both thermal and electrical performance without the need for restrictive die placement.
Implementation Method 1
The thermal cooler comprises a plurality of fluid channels for fluid cooling of the first die and the second die
Data Source
AI summary
An apparatus comprises a first die, a thermal cooler formed over at least a portion of the first die, a second die formed over at least a portion of the thermal cooler, and a plurality of through-silicon vias providing electrical connections between the first die and the second die. The thermal cooler comprises a plurality of fluid channels for fluid cooling of the first die and the second die, the plurality of fluid channels being formed horizontally through the thermal cooler. The plurality of through-silicon vias are formed vertically through the first die, the thermal cooler and the second die.