3D IC Hybrid Bonding and Dielectric Encapsulation for Compact Stacking
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Solution Overview
Problem
Current 3D integrated circuit (3D-IC) manufacturing techniques face challenges in achieving efficient bonding methods that reduce footprint, power consumption, and fabrication costs while ensuring reliable electrical connections and structural integrity in multi-layered semiconductor devices.
Innovation Solution
The use of hybrid bonding techniques, which involve direct dielectric-to-dielectric and metal-to-metal bonding, along with dielectric encapsulation and conductive feature formation, to align and connect semiconductor wafers and dies, enabling efficient electrical communication and structural support in multi-layered IC components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If hybrid bonding techniques are used to bond semiconductor wafers, then manufacturing precision and electrical connection reliability are improved, but device complexity and fabrication process difficulty increase
Solution Approach 1:
The patent applies preliminary action by performing alignment mark formation and surface preparation on semiconductor wafers before the actual hybrid bonding process. Alignment marks are deposited and patterned in advance to guide precise positioning during bonding, and surfaces are pre-treated to ensure optimal bonding conditions. This preliminary preparation enables high manufacturing precision while managing process complexity through structured sequential steps.
2Area of moving object
If multiple semiconductor dies are stacked to reduce footprint, then area and power consumption are reduced, but structural integrity and assembly difficulty worsen
Solution Approach 1:
The patent applies segmentation by dividing the multi-layer semiconductor structure into individually processable wafers that are subsequently stacked. Each wafer can be independently fabricated, tested, and prepared with bonding interfaces before final assembly. This segmentation enables reduced footprint through compact vertical stacking while managing assembly complexity through standardized interface designs and modular construction approaches.
3Reliability
If dielectric encapsulation is formed to protect integrated circuit components, then reliability and structural integrity are improved, but manufacturing time and process steps increase
Solution Approach 1:
The patent applies merging by combining the dielectric encapsulation process with other fabrication steps that occur at similar stages of wafer processing. The encapsulation layers are integrated into the overall device architecture and formed using deposition processes that can be performed in-line with other manufacturing operations. This merging approach provides reliable component protection while minimizing impact on fabrication throughput by eliminating separate dedicated encapsulation steps.
Data Source
AI summary
A semiconductor device including a first integrated circuit component, a second integrated circuit component, a third integrated circuit component, and a dielectric encapsulation is provided. The second integrated circuit component is stacked on and electrically coupled to the first integrated circuit component, and the third integrated circuit component is stacked on and electrically coupled to the second integrated circuit component. The dielectric encapsulation is disposed on the second integrated circuit component and laterally encapsulating the third integrated circuit component, where outer sidewalls of the dielectric encapsulation are substantially aligned with sidewalls of the first and second integrated circuit components. A manufacturing method of the above-mentioned semiconductor device is also provided.