3D IC Hybrid Bonding with RDL Pad Redistribution
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Solution Overview
Problem
Current three-dimensional integrated circuit technologies face challenges in die bonding pad position, size, and quantity limitations, which hinder efficient stacking and interconnection of semiconductor structures, leading to limitations in performance, density, and cost reduction.
Innovation Solution
A three-dimensional integrated circuit structure is developed using a hybrid bonding method that stacks semiconductor structures with re-distribution layers, allowing direct bonding of copper pads and insulating layers, and includes through-silicon vias and conductive posts for electrical connections, enabling flexible positioning and increased functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional die bonding methods are used, then bonding process is simple, but die bonding pad position, size, and quantity are limited
Solution Approach 1:
The patent introduces re-distribution layers that redistribute bonding pads in different spatial arrangements, effectively adding dimensional flexibility to the bonding interface. This allows bonding pads to be positioned and sized according to design requirements rather than die geometry constraints, resolving the contradiction between bonding simplicity and positioning flexibility.
Solution Approach 2:
The re-distribution layers act as intermediary structures between the die bonding pads and the external interconnects. These intermediate layers provide additional degrees of freedom in pad positioning and sizing, allowing the bonding process itself to remain simple while achieving flexible pad configurations through the intermediary re-distribution structures.
2Adaptability or versatility
If more interconnect lines are added to increase functionality, then functionality improves, but interconnect delay increases due to longer lines
Solution Approach 1:
The patent transitions from planar interconnect routing to three-dimensional stacked architecture with vertical through-silicon vias. This dimensional change allows interconnects to travel through the vertical dimension rather than across the chip surface, dramatically reducing interconnect line lengths and delays while maintaining or increasing functionality through additional stacking layers.
Solution Approach 2:
The patent implements nested stacking of multiple semiconductor dies with interconnects routed through vertical vias that penetrate through multiple layers. This nesting approach allows multiple functional layers to be integrated vertically, reducing the horizontal distance signals must travel while maintaining high functionality through the stacked configuration.
3Volume of moving object
If chip size is reduced to achieve smaller form factor, then form factor improves, but heat dissipation becomes more difficult
Solution Approach 1:
The patent stacks multiple thin semiconductor dies vertically, creating a compact nested structure that achieves small form factor. The vertical stacking allows heat to be dissipated through multiple exposed surfaces (top and bottom of each die) rather than from a single large surface, improving heat dissipation efficiency while maintaining compact volume.
Solution Approach 2:
The patent moves heat dissipation from a two-dimensional surface problem to a three-dimensional solution by stacking dies vertically. This creates multiple heat dissipation pathways through the vertical dimension, with each die layer providing additional surface area for heat rejection, thereby improving thermal management in compact packages.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach overcomes die bonding limitations, enhancing performance, density, and cost efficiency by allowing for flexible die positioning and increased interconnectivity, resulting in improved multi-chip heterogeneous packaging configurations.
Implementation Method 1
A first semiconductor structure is hybrid bonded to a second semiconductor structure. The plurality of first bonding pads is directly bonded to the plurality of second bonding pads, respectively.
Data Source
AI summary
The present invention provides a 3D integrated circuit structure formed by stacking semiconductor structures. The semiconductor structures form a multi-die heterogeneous 3D packaging by direct bonding the bonding pads of re-distribution layers. The same or different dies are used to produce the semiconductor structures through the back-end packaging process, and then hybrid bonding technology is used to stack and interconnect the semiconductor structures. The position of the bonding pad can be redefined by re-distribution layer, thereby overcoming the limitations of chip bonding pad position, chip size and quantity.