3D IC Thermal Simulation Using Die Temperature Profiles
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Solution Overview
Problem
Current semiconductor device design processes fail to accurately simulate thermal effects between dies in 3D integrated circuits, leading to potential performance degradation and function faults due to assuming a single, constant environment temperature across all dies.
Innovation Solution
The method involves simulating the operation of one die based on the environment temperature determined from the operational temperature of another die, using a temperature function that considers the thermal effects and ambient temperature, allowing for more accurate thermal condition simulation and addressing negative thermal influences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single constant environment temperature is assumed for all dies in 3D IC simulation, then the simulation process is simplified, but the accuracy of thermal condition representation deteriorates
Solution Approach 1:
The patent divides the 3D IC into multiple discrete dies, each with its own operational temperature characteristics. Instead of treating the entire system as a single thermal environment, the simulation segments the thermal analysis by individually modeling each die's temperature profile and its impact on adjacent dies, thereby improving thermal condition accuracy while maintaining manageable simulation complexity
Solution Approach 2:
The patent applies different temperature conditions to different spatial locations within the 3D IC structure. Each die is assigned a specific operational temperature based on its local heat generation characteristics, and adjacent dies experience different environment temperatures reflecting their proximity to heat sources. This local differentiation approach accurately represents real thermal conditions without requiring overly complex global simulation models
2Productivity
If thermal effects between adjacent dies are not considered in simulation, then the design process is faster and simpler, but the reliability of the semiconductor device deteriorates due to undetected performance degradation
Solution Approach 1:
The patent performs thermal interaction simulations during the design phase before manufacturing, allowing potential performance degradation and function faults to be identified and corrected in advance. By simulating the thermal effects between adjacent dies beforehand, designers can optimize the layout and thermal management strategies to prevent reliability issues before they manifest in actual devices
Solution Approach 2:
The patent implements a feedback mechanism where the operational temperature of each die is used to determine the environment temperature of adjacent dies in subsequent simulation iterations. This creates a closed-loop thermal analysis that accurately captures the mutual thermal influence between dies, enabling designers to assess reliability impacts and make informed design decisions while maintaining efficient simulation throughput
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach provides a more accurate simulation of thermal conditions in 3D ICs by accounting for the operational temperatures of adjacent dies, reducing the risk of performance degradation and function faults during design, thereby improving the reliability of semiconductor devices.
Implementation Method 1
simulating operation of a circuit in a second die of the 3DIC based on the determined temperature profile and a corresponding sub-region of the plurality of sub-regions
Data Source
AI summary
A method of making a semiconductor device includes determining a temperature profile for a first die of a three-dimensional integrated circuit (3DIC), wherein the first die comprises a plurality of sub-regions of the first die based on the determined temperature profile. The method further includes simulating operation of a circuit in a second die of the 3DIC based on the determined temperature profile and a corresponding sub-region of the plurality of sub-regions.