3D III-V Semiconductor Elements With C-Plane Active Area Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing optoelectronic devices with three-dimensional semiconductor elements face challenges in controlling the shape and wavelength of active areas, particularly for emitting or absorbing radiation in the visible spectrum, and are difficult to produce at an industrial scale and low cost.
Innovation Solution
A method involving MOCVD for growing semiconductor elements and RPCVD or MBE for forming active areas, with precise control over quantum well formation on c-plane surfaces, allowing for varied wavelengths and industrial scalability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If high proportion of additional III compound (indium) is introduced to achieve green or red light emission, then the wavelength of emitted radiation increases, but it becomes difficult to incorporate the compound effectively
Solution Approach 1:
The patent changes the growth parameters by using lower temperatures (700-800°C) and higher V/III ratios during active area formation compared to the semiconductor element growth stage. This parameter adjustment enables effective incorporation of high proportions of indium (additional III compound) to achieve green and red light emission wavelengths while maintaining manufacturing control
Solution Approach 2:
The patent implements dynamic adjustment of growth conditions by switching between two distinct growth stages: first stage for semiconductor elements with standard parameters, and second stage for active areas with modified parameters (lower temperature, higher V/III ratio). This dynamic parameter switching resolves the contradiction between achieving long wavelengths and maintaining incorporation control
2Adaptability or versatility
If axial-type optoelectronic devices are manufactured with active areas at the top of three-dimensional semiconductor elements, then the devices can emit or detect electromagnetic radiation, but it is difficult to control the shape of the active areas and achieve precise wavelength control
Solution Approach 1:
The patent applies preliminary action by forming a c-plane surface on the top of each semiconductor element through controlled growth conditions (low temperature, high V/III ratio) before depositing the active area. This preliminary surface preparation enables subsequent precise control of active area shape and wavelength characteristics
Solution Approach 2:
The patent uses distinct parameter sets for different growth stages: standard parameters for semiconductor element growth, and modified parameters (700-800°C, high V/III ratio) for active area formation. This parameter differentiation enables independent control of element shape and active area characteristics, resolving the contradiction between adaptability and manufacturing precision
3Productivity
If conventional manufacturing methods are used for optoelectronic devices, then production can proceed with standard processes, but the devices are difficult to produce at industrial scale and low cost
Solution Approach 1:
The patent merges two growth stages into a single continuous process using the same MOCVD reactor, eliminating the need for separate reactors or complex process integration. This merging enables industrial-scale production by maintaining manufacturing simplicity while achieving advanced device characteristics
Solution Approach 2:
The patent makes the MOCVD reactor universal by configuring it to perform both semiconductor element growth and active area formation functions. This multi-functionality reduces equipment requirements and process complexity, enabling cost-effective industrial scale production while maintaining high productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control over the wavelength and shape of active areas, facilitating the production of optoelectronic devices capable of emitting multiple colors, such as red, green, and blue lights, at an industrial scale and reduced cost.
Implementation Method 1
growing semiconductor elements... by metal-organic chemical vapor deposition (MOCVD)
Implementation Method 2
the active areas are formed by remote plasma chemical vapor deposition (RPCVD)
Data Source
Figure 1~2
Figure 3~5
Figure 6~7
AI summary
The present disclosure relates to a method for manufacturing an optoelectronic device (70) comprising forming, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements (34) made of a III-V compound, doped or undoped, each semiconductor element extending along an axis (C) and comprising a top (35), and forming by remote plasma chemical vapor deposition, RPCVD, or by molecular-beam epitaxy, MBE, or by hydride vapor phase epitaxy, HVPE, for each semiconductor element, an active area (44) only on said top comprising at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.