3D Stacked Image Sensor Layout for Lower Parasitic Capacitance

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Solution Overview

Problem

Three-dimensionally structured imaging devices are prone to influences from resistive, capacitive, and inductive components due to their complex internal circuit structures, leading to performance degradation.

Innovation Solution

The implementation of a low-permittivity region around specific circuits in a three-dimensionally structured imaging device, such as between wiring lines and semiconductor substrates, to reduce parasitic capacitance and improve signal processing efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a three-dimensionally structured imaging device is implemented with stacked substrates, then pixel density and integration are improved, but parasitic capacitance and signal degradation increase

Engineering Contradiction:
Improvepixel densityVSAvoidparasitic capacitance
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

The patent applies local quality by providing low-permittivity regions specifically around circuits that read electric charges from sensor pixels and output pixel signals, while other regions of the device maintain normal permittivity. This targeted approach reduces parasitic capacitance in critical areas without requiring changes to the entire device structure, thus resolving the contradiction between high pixel density and reduced parasitic capacitance.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the permittivity parameter of the insulating material in specific regions by introducing low-permittivity materials or structures. This parameter change directly reduces the capacitive coupling between adjacent wiring lines and between wiring lines and substrates, thereby reducing parasitic capacitance while maintaining the three-dimensional stacked structure for high pixel density.

Inventive Principle:
Principle #35Parameter changes

2Adaptability or versatility

If complex internal circuit structures are added to achieve higher integration, then device functionality is improved, but resistive, capacitive, and inductive component influences increase

Engineering Contradiction:
Improvedevice functionalityVSAvoidsignal integrity
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent applies local quality by concentrating low-permittivity regions around specific circuits that are most susceptible to parasitic effects, particularly those reading electric charges from sensor pixels. This selective approach maintains complex circuit functionality while protecting critical signal paths from degradation due to resistive, capacitive, and inductive influences.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The low-permittivity regions act as intermediary elements between adjacent wiring lines and between wiring lines and substrates. These intermediary regions reduce the direct electromagnetic coupling that causes parasitic capacitance, thereby improving signal integrity while allowing complex circuit structures to maintain their functionality.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively minimizes the impact of parasitic capacitance, enhancing the conversion efficiency of electric charges into voltage and improving overall imaging device performance.

Implementation Method 1

a low-permittivity region is provided in at least any region around a circuit that reads electric charges from the sensor pixel and outputs the pixel signal

Methodology Applied
Scientific EffectParasitic capacitance: Capacitance

Implementation Method 2

reduce permittivity of a wiring line included in a second insulating layer or of a space around a second semiconductor substrate

Methodology Applied
Scientific EffectPermittivity: Dielectric Permittivity

Data Source

PatentUS12052525B2Three-dimensionally structured imaging device
Publication Date: 2024.07.30 SONY SEMICON SOLUTIONS CORP
  • US12052525B2 patent drawing
  • US12052525B2 patent drawing
  • US12052525B2 patent drawing

AI summary

An imaging device according to an embodiment of the present disclosure includes: a first substrate including a sensor pixel that performs photoelectric conversion; a second substrate including a pixel circuit that outputs a pixel signal on a basis of electric charges outputted from the sensor pixel; and a third substrate including a processing circuit that performs signal processing on the pixel signal. The first substrate, the second substrate, and the third substrate are stacked in this order, and a low-permittivity region is provided in at least any region around a circuit that reads electric charges from the sensor pixel and outputs the pixel signal.