3D Semiconductor Interposer with Embedded Vias, Waveguides, and Channels
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Solution Overview
Problem
Conventional microfabrication techniques are limited to creating two-dimensional extruded geometries, making it difficult to fabricate complex three-dimensional micro-electro-mechanical systems (MEMS), microfluidic systems, and micro-optical systems with intricate structures and connections.
Innovation Solution
The development of three-dimensional (3D) semiconductor devices with conductive vias, waveguides, and fluidic channels that can take any path through the semiconductor element, enabling the formation of complex electrical, optical, and fluidic connections between devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If conventional layer-by-layer microfabrication techniques are used, then manufacturing process simplicity is maintained, but structural complexity and three-dimensional connectivity are limited
Solution Approach 1:
The patent transitions from conventional two-dimensional extruded geometries to true three-dimensional structures by enabling conductive vias, waveguides, and fluidic channels to follow arbitrary curved paths through the semiconductor substrate. This dimensional evolution allows complex spatial routing while maintaining manufacturing feasibility through advanced lithographic and etching techniques.
Solution Approach 2:
The fabrication process is divided into multiple lithographic and etching steps that sequentially create different three-dimensional features. Each layer and pattern is formed independently, allowing complex overall structures to be built from simpler segmented manufacturing operations.
2Adaptability or versatility
If straight-through conductive vias are used, then manufacturing simplicity is maintained, but routing flexibility and connectivity options are limited
Solution Approach 1:
Conductive vias are extended from simple straight vertical connections to three-dimensional curved paths that can navigate around obstacles and connect laterally offset terminals. This enables flexible routing topologies including loops, branches, and arbitrary geometries within the semiconductor substrate.
3Manufacturing precision
If conventional two-dimensional microfabrication is used, then feature size precision is maintained, but three-dimensional spatial arrangement capability is limited
Solution Approach 1:
The patent extends precise lithographic patterning and etching techniques from two-dimensional surfaces into the third dimension, enabling accurate control of three-dimensional feature geometries including curved conductive vias, waveguides, and fluidic channels with controlled cross-sections and paths.
Data Source
AI summary
Various three-dimensional devices that can be formed within the bulk of a semiconductor by photo-controlled selective etching are described herein. With more particularity, semiconductor devices that incorporate three-dimensional electrical vias, waveguides, or fluidic channels that are disposed within a semiconductor are described herein. In an exemplary embodiment, a three-dimensional interposer chip includes an electrical via, a waveguide, and a fluidic channel, wherein the via, the waveguide, and the fluidic channel are disposed within the body of a semiconductor element rather than being deposited on a surface. The three-dimensional interposer is usable to make electrical, optical, or fluidic connections between two or more devices.