3D Interposer Package Layout for Low-Loss Die Integration
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and reducing yield loss and power insertion loss in semiconductor packaging, particularly with the need for smaller and more creative packaging techniques as demand for smaller electronic devices grows.
Innovation Solution
The use of a 3D package with an interposer structure that includes an interconnect device providing electrical connections between device dies and integrating passive devices within the interposer structure, which reduces yield loss and power insertion loss by placing passive devices in closer proximity to device dies, and utilizes fine-pitch electrical routing for high-speed signal transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional semiconductor packaging methods are used, then manufacturing process is simple, but integration density is low and yield loss is high
Solution Approach 1:
The patent implements Package-on-Package (PoP) technology that stacks semiconductor packages vertically in three dimensions rather than arranging them horizontally. This dimensional transition from 2D to 3D packaging enables significantly higher integration density within the same footprint area, directly resolving the contradiction between manufacturing simplicity and integration density.
Solution Approach 2:
The patent embeds passive devices (such as capacitors and inductors) within the interposer structure that sits between active device dies. This nesting approach places passive components inside the packaging hierarchy rather than as separate external elements, increasing overall integration density without proportionally increasing external package complexity.
2Loss of energy
If passive devices are placed far from device dies, then package structure is simple, but power insertion loss is high
Solution Approach 1:
The patent integrates passive devices locally within the interposer structure positioned adjacent to or between active device dies. This local placement of passive components minimizes the distance for power and signal transmission paths, reducing power insertion loss and electromagnetic interference while maintaining a manageable interposer structure.
3Manufacturing precision
If feature size is reduced continuously, then integration density increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent divides the semiconductor package into multiple functional segments: active device dies, an interposer structure containing passive devices, and connection layers. This segmentation allows each component to be manufactured and tested separately with optimized process parameters, then assembled through wafer-level bonding. This approach enables fine-pitch interconnections without requiring the entire manufacturing process to achieve the same level of precision simultaneously.
Data Source
AI summary
A package includes an interposer structure free of any active devices. The interposer structure includes an interconnect device; a dielectric film surrounding the interconnect device; and first metallization pattern bonded to the interconnect device. The package further includes a first device die bonded to an opposing side of the first metallization pattern as the interconnect device and a second device die bonded to a same side of the first metallization pattern as the first device die. The interconnect device electrically connects the first device die to the second device die.