3D Interposer Package Layout for Low-Loss Die-to-Die Routing
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and efficient packaging of semiconductor devices, particularly in Package-on-Package (PoP) technology, where reducing yield loss and power/insertion loss while enhancing circuit speed is crucial.
Innovation Solution
The implementation of a 3D package structure that includes an interposer structure with integrated passive devices and direct bonding of device dies, utilizing fine-pitch electrical routing and conductive connectors to reduce signal loss and increase circuit speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If Package-on-Package (PoP) technology is used to increase integration density, then component density and functionality are enhanced, but yield loss and power/insertion loss increase
Solution Approach 1:
The patent transitions from two-dimensional planar packaging to three-dimensional stacked packaging by vertically stacking multiple semiconductor dies and passive devices on an interposer substrate. This dimensional change enables higher integration density while maintaining electrical connection quality through optimized vertical interconnect structures, thereby improving productivity without proportionally increasing yield loss.
Solution Approach 2:
The interposer substrate serves as an intermediary component between active semiconductor dies and passive devices. It provides a platform for integrating through-silicon vias, redistribution layers, and bonding interfaces that facilitate reliable electrical connections while enabling the stacked architecture. This intermediary structure resolves the contradiction by providing a stable foundation for high-density integration.
2Ease of manufacture
If conventional packaging techniques are used, then manufacturing simplicity is maintained, but circuit speed and signal quality deteriorate due to power/insertion loss
Solution Approach 1:
By stacking components vertically rather than arranging them in-plane, the patent reduces signal path lengths between active and passive components. This dimensional reorganization enables higher circuit speeds through shorter interconnect lengths while maintaining manufacturing feasibility through established semiconductor packaging processes adapted for 3D integration.
Solution Approach 2:
The interposer substrate is prepared in advance with pre-formed through-silicon vias, redistribution layers, and bonding structures before the final assembly of semiconductor dies and passive devices. This preliminary preparation of the interconnect infrastructure enables faster signal transmission while simplifying the overall manufacturing process by separating substrate preparation from component assembly.
3Device complexity
If passive devices are placed farther from device dies, then manufacturing complexity is reduced, but power/insertion loss increases and package performance deteriorates
Solution Approach 1:
The patent merges active semiconductor dies and passive devices into a single integrated 3D package structure on the interposer substrate. This consolidation places passive devices in close proximity to their corresponding active components through vertical stacking, reducing interconnect lengths and power loss. The merging of previously separate packaging operations into an integrated 3D structure achieves both performance improvement and manufacturing efficiency.
Solution Approach 2:
The patent implements a nested architecture where passive devices are positioned within the vertical footprint of active semiconductor dies on the interposer substrate. This nesting arrangement maximizes spatial utilization, places passive components close to active components for reduced signal loss, and maintains manufacturing simplicity by using standard bonding and interconnection processes within the nested configuration.
Data Source
AI summary
A package includes an interposer structure free of any active devices. The interposer structure includes an interconnect device; a dielectric film surrounding the interconnect device; and first metallization pattern bonded to the interconnect device. The package further includes a first device die bonded to an opposing side of the first metallization pattern as the interconnect device and a second device die bonded to a same side of the first metallization pattern as the first device die. The interconnect device electrically connects the first device die to the second device die.