3D RF LINAC Layout for Compact High-Energy Ion Implantation
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Solution Overview
Problem
Conventional high-energy ion implantation systems have a large footprint, requiring costly and expansive clean room environments, which increases the cost of manufacturing semiconductor chips.
Innovation Solution
The system employs a compact design by splitting linear accelerators into sections and using achromatic bending magnets to alter the beam path in multiple planes, minimizing the footprint while maintaining high beam current and purity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional beamline components are arranged in a horizontal plane forming a polygonal chain, then the system can provide high-energy ion implantation, but the footprint becomes substantially large
Solution Approach 1:
The patent applies dimensionality change by transitioning from a conventional horizontal polygonal chain arrangement to a three-dimensional configuration where beamline components are stacked vertically. Multiple linear accelerator sections are arranged in different vertical levels and connected through vertical beam transport, allowing the system to achieve high ion beam energy without requiring a large horizontal footprint.
2Use of energy by moving object
If the system is designed with a large footprint, then high-energy ion implantation can be achieved, but the clean room construction and maintenance costs increase substantially
Solution Approach 1:
By implementing a vertical stacking architecture where accelerator sections and beamline components are arranged in multiple vertical levels, the system achieves high ion beam energy within a compact footprint. This dimensional transition directly reduces the clean room area required, thereby lowering both construction and maintenance costs.
3Area of stationary object
If linear accelerators are split into sections with achromatic bending magnets, then the footprint is minimized, but the device complexity increases
Solution Approach 1:
The linear accelerator is divided into multiple sections that are stacked vertically and connected through achromatic bending magnets. Each section can be independently optimized and adjusted, allowing for compact arrangement while maintaining beam quality. The segmentation enables modular construction and simplifies alignment procedures despite the increased three-dimensional complexity.
Solution Approach 2:
The achromatic bending magnets serve multiple functions: they redirect the beam between vertical levels, maintain beam quality by compensating for dispersion, and enable compact configuration. This multi-functionality reduces the need for additional specialized components, balancing the increased structural complexity with functional integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly reduces the required clean room space, lowering construction and maintenance costs while enabling high-energy ion implantation with increased beam current and purity.
Implementation Method 1
dopant atoms/molecules are ionized and isolated, sometimes accelerated or decelerated, formed into a beam
Implementation Method 2
dopant atoms/molecules are ionized and isolated, sometimes accelerated or decelerated
Implementation Method 3
a mass analyzing magnet is configured to mass analyze the ion beam along the beam path
Implementation Method 4
a first RF linear accelerator is configured to receive the ion beam at a first accelerator entrance and to accelerate the ion beam to a first accelerator exit
Implementation Method 5
a first magnet is disposed between the first accelerator exit and the second accelerator entrance along the beam path, wherein the first magnet is configured to alter a trajectory of the beam path by greater than 90° along a first plane
Implementation Method 6
a beam shaping apparatus having a beam shaping entrance and a beam shaping exit along the beam path, wherein the beam shaping apparatus is configured to define a shape of the ion beam along the beam path
Implementation Method 7
The dopant ions physically bombard the workpiece, enter the surface and typically come to rest below the workpiece surface in the crystalline lattice structure thereof
Data Source
AI summary
A high-energy ion implantation system has an ion source and mass analyzer to form and analyze an ion beam along a beam path. A first RF LINAC accelerates the ion beam to a first accelerator exit, and a second RF LINAC accelerates the ion beam to a second accelerator exit along the beam path. A first magnet between the first and second RF LINACs alters the beam path along a first plane. A third RF LINAC accelerates the ion beam, and a second magnet between the second and third RF LINACs alters the beam path along a second plane. A beam shaping apparatus defines a shape of the ion beam, and a third magnet between the third RF LINAC beam shaping apparatus alters the beam path along a third plane, where the first, second, and third planes are not coplanar.