3D Magnetic Memory Read/Write Elements and Stacked Storage Layers
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Solution Overview
Problem
Traditional solid-state memories have limited storage capacity and higher cost per megabyte compared to electromechanical disk drives, necessitating the development of more efficient three-dimensional storage solutions.
Innovation Solution
A three-dimensional solid-state magnetic memory with integrated read/write elements, including read conductors, flux caps, read sensors, and write conductors forming current loops around magnetic poles, allowing for the writing and reading of magnetic domains in a layer representing multiple bits, enabling increased storage capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If two-dimensional cross-point memory arrays are used, then the memory structure is simple and fabrication is easier, but the storage capacity is limited and cost per megabyte is higher
Solution Approach 1:
The patent transitions from traditional two-dimensional cross-point memory arrays to a three-dimensional magnetic memory structure. Multiple storage layers are stacked vertically, with each layer containing memory cells formed by the intersection of bit lines and word lines. This vertical stacking enables significantly increased storage capacity while maintaining the simplicity of cross-point fabrication techniques, directly resolving the contradiction between ease of manufacture and storage capacity.
2Quantity of substance
If three-dimensional magnetic memory is implemented, then storage capacity increases, but the device structure becomes more complex
Solution Approach 1:
The three-dimensional magnetic memory is segmented into multiple identical storage layers stacked vertically. Each layer contains memory cells formed by the intersection of bit lines and word lines, with heating elements positioned adjacent to the storage layers. This segmentation allows the complex three-dimensional structure to be built from repeated modular units, simplifying fabrication and reducing overall device complexity while maintaining high storage capacity.
3Quantity of substance
If higher storage capacity is achieved through three-dimensional stacking, then cost per megabyte decreases, but manufacturing precision requirements increase
Solution Approach 1:
The bit lines and word lines serve multiple functions: they provide electrical connections to memory cells in each storage layer, serve as current paths for writing data through heating elements, and act as reference structures for aligning subsequent storage layers. This multi-functionality reduces the need for additional specialized structures, thereby reducing manufacturing precision requirements while achieving high storage capacity through three-dimensional stacking.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution enhances storage capacity and reduces costs by allowing for the efficient writing and reading of multiple bits in a three-dimensional structure, overcoming the limitations of two-dimensional arrays.
Implementation Method 1
The first write conductors and the second write conductors form current loops around the magnetic poles
Implementation Method 2
read sensors formed proximate to the flux caps
Data Source
AI summary
Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles.