3D Magnetic Memory Stacked Layers Cell Density
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Solution Overview
Problem
Traditional solid-state magnetic memories have limited storage capacity and cell density due to larger cell sizes compared to flash memories, leading to higher costs per megabyte and reduced durability.
Innovation Solution
A three-dimensional magnetic memory is developed using stacked data storage layers with antiparallel coupling at ambient temperatures, transitioning to parallel coupling at higher temperatures to reduce effective cell size and increase cell density, allowing for higher bit density comparable to flash memories and disk drives.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If traditional solid-state magnetic memory uses two-dimensional cell structure, then manufacturing is simpler, but cell density is reduced and cell size is larger
Solution Approach 1:
The patent transitions from a two-dimensional cell structure to a three-dimensional stacked structure by adding multiple data storage layers along the Z-axis. Each layer is separated by spacing layers, creating vertical stacking that increases cell density without increasing the planar footprint. This dimensional change allows multiple storage layers to occupy the same lateral space, directly resolving the contradiction between structural simplicity and cell density.
2Quantity of substance
If data storage layers are placed close together to increase density, then cell density improves, but magnetic stray fields from neighboring layers cause interference and writing errors
Solution Approach 1:
The patent introduces non-magnetic spacing layers between adjacent data storage layers. These spacing layers act as intermediaries that prevent magnetic field coupling and stray field interference between neighboring layers. The spacing layers physically separate the magnetic storage layers while allowing the structure to maintain high vertical density, thus enabling close placement without magnetic interference.
3Quantity of substance
If magnetic memory cell size is reduced to increase density, then cell density improves, but manufacturing precision requirements increase
Solution Approach 1:
By adding the vertical dimension through stacked layers, the patent achieves higher storage density without reducing the lateral feature size. The effective cell size is reduced through vertical stacking rather than lateral compression, which maintains more relaxed manufacturing precision requirements for the planar dimensions while still achieving increased density.
Solution Approach 2:
The patent divides the magnetic memory into multiple discrete data storage layers separated by spacing layers. Each layer can be independently manufactured and controlled, allowing for better process control and reduced precision requirements compared to attempting to manufacture a single ultra-dense layer. The segmentation into stackable units simplifies the manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The three-dimensional magnetic memory achieves reduced cell size and increased cell density, competing with flash memories and disk drives in terms of storage capacity and cost-effectiveness.
Implementation Method 1
The first data storage layer and the second data storage layer are antiparallel coupled across the AP coupling layer at ambient temperature
Implementation Method 2
a first ferromagnetic layer, an antiparallel (AP) coupling layer, a second ferromagnetic layer, and a third ferromagnetic layer
Implementation Method 3
the data storage layers are not written to by magnetic stray fields of neighboring data storage layers
Implementation Method 4
there is a zero (or near zero) net magnetic moment in the data storage layer at ambient temperature and low fields
Data Source
AI summary
Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. The data storage layers are each formed from a multi-layer structure. At ambient temperatures, the multi-layer structures exhibit an antiparallel coupling state with a near zero net magnetic moment. At higher transition temperatures, the multi-layer structures transition from the antiparallel coupling state to a parallel coupling state with a net magnetic moment. At yet higher temperatures, the multi-layer structure transitions from the antiparallel coupling state to a receiving state where the coercivity of the multi-layer structures drops below a particular level so that magnetic fields from write elements or neighboring data storage layers may imprint data into the data storage layer.