3D Magnetron for Low Angle Deposition Control
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Solution Overview
Problem
In plasma vapor deposition (PVD) chambers, achieving uniform deposition over the entire substrate surface is not always desirable, necessitating the development of methods and apparatus for producing low angle depositions suitable for applications like hard masking in semiconductor processes.
Innovation Solution
A three-dimensional (3D) magnetron is used in conjunction with a sputtering target and a housing that allows for controlled ion collimation and magnetic field guidance, enabling low angle depositions by adjusting the angle of the linear channel and using magnetic assemblies to direct ions towards the substrate, while the substrate can be moved vertically and horizontally to achieve specific deposition patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a conventional PVD chamber uses a standard sputter target configuration, then uniform deposition is achieved over the substrate surface, but the deposition pattern cannot be controlled for specific applications like hard masking
Solution Approach 1:
The patent introduces a third dimension by extending the pole pieces vertically beyond the first plane, creating a three-dimensional magnetic field structure. This 3D configuration allows control over deposition patterns while maintaining uniformity, resolving the contradiction between adaptability and manufacturing precision
Solution Approach 2:
The magnetron is divided into multiple segmented pole pieces (first portion, second portion, third portion, fourth portion, fifth portion, sixth portion, seventh portion, and eighth portion) that can be independently configured. This segmentation enables precise control over magnetic field distribution, allowing both uniform deposition and patterned deposition as needed
2Adaptability or versatility
If a 3D magnetron with multiple pole pieces is used to achieve low angle deposition, then deposition pattern control is improved, but the device complexity increases
Solution Approach 1:
The 3D magnetron structure with multiple pole pieces serves multiple functions: it generates the magnetic field for sputtering, controls the deposition angle, and enables patterned deposition. This multi-functionality reduces the need for additional separate components, offsetting the inherent structural complexity
Solution Approach 2:
The pole pieces are arranged in a nested configuration where the inner pole piece is surrounded by the outer pole pieces with portions extending upward. This nested structure achieves complex 3D magnetic field control while maintaining a compact overall form factor, mitigating the complexity issue
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the control over deposition patterns and rates, allowing for precise material distribution on the substrate, improving the uniformity and effectiveness of the sputtering process.
Implementation Method 1
a three dimensional (3D) magnetron with a sputtering target with a hollow inner area, wherein the 3D magnetron overlaps at least a portion of sides of the sputtering target
Implementation Method 2
In a plasma vapor deposition (PVD) chamber, materials are deposited on substrates using a sputter target composed of the deposited material. Plasma is generated within the PVD chamber causing the target to sputter or deposit the material onto the substrate
Data Source
AI summary
Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.