3D Memory Cell Structure for Source-Layer Annealing Isolation
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Solution Overview
Problem
Current semiconductor devices face challenges in enhancing data storage capacity and integration while maintaining electrical characteristics, particularly in three-dimensional memory cell arrays where thermal damage and electrical isolation issues arise during laser annealing processes.
Innovation Solution
The semiconductor device incorporates an insulating wall, conductive base layer, and cover insulating layer in the connection and peripheral circuit connection regions to prevent thermal damage and undesired electrical connections, with ring insulation patterns surrounding plugs to ensure precise electrical isolation and improved crystallization of the common source layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If laser annealing process is applied to improve crystallization of common source layer, then crystallization quality is improved, but thermal damage occurs to surrounding structures
Solution Approach 1:
A cover insulating layer is introduced as an intermediary protective structure between the laser annealing process and the surrounding structures. This layer absorbs and dissipates excess heat, preventing thermal damage to the insulating wall and conductive base layer while allowing the common source layer to undergo proper crystallization. The cover insulating layer acts as a thermal buffer that mediates the harmful thermal effects during the annealing process.
Solution Approach 2:
The insulating wall and conductive base layer are formed in advance before the laser annealing process. These structures are preliminarily positioned to provide electrical isolation and thermal protection during the subsequent crystallization treatment. The preliminary formation of these protective structures ensures that when laser annealing is applied, the surrounding areas are already shielded from thermal damage.
2Quantity of substance
If three-dimensional memory cell array structure is implemented to increase storage capacity, then data storage capacity is improved, but electrical isolation issues and thermal damage occur
Solution Approach 1:
The three-dimensional memory cell array is segmented into distinct functional regions separated by insulating walls. The cell region, connection region, and peripheral circuit connection region are spatially divided and electrically isolated from each other. This segmentation allows high-density vertical stacking for increased storage capacity while maintaining proper electrical isolation between different functional blocks through the insulating wall structures.
Solution Approach 2:
The memory device transitions from two-dimensional planar arrangement to three-dimensional vertical stacking. Multiple layers of memory cells are stacked vertically with gate electrodes arranged in different vertical levels, connected through vertical channel structures. This dimensional change dramatically increases storage capacity within the same footprint while the insulating walls provide necessary electrical isolation in the vertical dimension.
3Reliability
If insulating wall and conductive base layer are added to prevent thermal damage and ensure electrical isolation, then reliability is improved, but device complexity increases
Solution Approach 1:
The insulating wall serves multiple functions simultaneously: it provides electrical isolation between the cell region and connection region, acts as a thermal barrier during laser annealing, and defines the spatial boundaries of different functional regions. The conductive base layer similarly provides both electrical connection and structural support. This multi-functionality reduces the need for separate dedicated structures, thereby limiting the increase in device complexity while maintaining improved reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the semiconductor device's electrical characteristics and integration by preventing thermal damage and ensuring precise electrical isolation, leading to improved performance and reliability in three-dimensional memory cell arrays.
Implementation Method 1
an insulating wall extending in the vertical direction at a boundary between the cell region and the connection region... a cover insulating layer extending in the vertical direction on the conductive base layer in the connection region and the peripheral circuit connection region
Implementation Method 2
laser annealing processes... improved crystallization of the common source layer
Data Source
AI summary
A semiconductor device including a peripheral circuit structure; and a cell structure stacked on the peripheral circuit structure and including a cell region, a connection region, and a peripheral circuit connection region, wherein the cell structure includes gate electrodes spaced apart from one another in a vertical direction in the cell region; a channel structure extending in the vertical direction through the gate electrodes, in the cell region, and including a first end and a second end opposite to the first end, the first end being proximate to the peripheral circuit structure; an insulating wall extending in the vertical direction at a boundary between the cell region and the connection region; and a common source layer connected to the second end of the channel structure in the cell region and having a portion arranged on a sidewall of the insulating wall.