3D Memory Vertical Hole Barrier Film for High-Aspect Reliability
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Solution Overview
Problem
Current semiconductor devices face challenges in increasing data storage capacity while maintaining desired electrical properties and reliability, especially as the aspect ratio of vertical holes is increased.
Innovation Solution
A method of manufacturing a semiconductor device with three-dimensionally arranged memory cells, where the stacked number of word lines is increased to improve integration density. This is achieved by forming a structure with alternately stacked films, creating vertical holes, and using carbon-containing barrier films to maintain electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the stacked number of word lines is increased to improve integration density, then the aspect ratio of vertical holes increases, but electrical properties and reliability deteriorate
Solution Approach 1:
A carbon-containing barrier film is introduced as an intermediary layer between the sacrificial metal film and the alternating first and second films. This barrier film prevents harmful interactions (such as diffusion or contamination) while allowing the high-aspect-ratio vertical hole structure to be formed and subsequently filled with channel structures, thus enabling high integration density without compromising electrical properties and reliability
2Productivity
If the aspect ratio of vertical holes is increased to accommodate more word lines, then integration density improves, but manufacturing precision becomes more difficult
Solution Approach 1:
The carbon-containing barrier film is formed on the inner sidewall of the vertical hole before the sacrificial metal film is deposited. This preliminary action provides a protective layer that facilitates controlled deposition and prevents defects during the formation of high-aspect-ratio vertical holes, thereby maintaining manufacturing precision even as the aspect ratio increases to achieve higher integration density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for increased integration density and maintains desired electrical properties and reliability even with increased aspect ratios of vertical holes, effectively addressing the challenge of enhancing data storage capacity.
Implementation Method 1
The carbon-containing barrier film is removed using an ashing process
Data Source
AI summary
To manufacture a semiconductor device, a structure is formed by alternately stacking a plurality of first films and a plurality of second films one-by-one on a substrate. A vertical hole is formed to vertically pass through the structure. A carbon-containing barrier film is formed to conformally cover an inner sidewall of the vertical hole. The carbon-containing barrier film is in contact with portions of the plurality of first films and the plurality of second films. A sacrificial metal film is formed on the carbon-containing barrier film in the vertical hole. The sacrificial metal film is removed to expose the carbon-containing barrier film. The carbon-containing barrier film is removed using an ashing process.