3D Non-Volatile Memory Bit Flipping for Charge Spreading Errors
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Solution Overview
Problem
The challenge in non-volatile memory devices with a 3D structure is the acceleration of charge spreading between memory cells due to certain patterns, leading to increased bit errors and reduced reliability.
Innovation Solution
The solution involves performing a weak pattern detection operation and encoding operation to identify and convert data patterns that could cause errors, flipping specific bits to generate encoded data, and storing this data in a non-volatile memory device to prevent errors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a 3D structure is introduced to increase memory capacity, then storage density is improved, but charge spreading between vertically adjacent memory cells accelerates causing increased bit errors
Solution Approach 1:
The patent performs weak pattern detection and bit flipping operations before programming data into the 3D memory structure. By detecting potential error patterns (such as alternating patterns like 010101) in advance and flipping bits to eliminate these patterns, the system prevents charge spreading errors before they occur, thereby maintaining data integrity while utilizing high-density 3D architecture
Solution Approach 2:
The patent applies preliminary anti-action by detecting weak patterns that could lead to charge spreading and actively flipping bits to counteract the potential harmful effect. This preemptive measure opposes the charge spreading phenomenon before it can cause bit errors, allowing the 3D structure to maintain both high capacity and reliability
2Reliability
If weak pattern detection and bit flipping operations are performed, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent implements self-service by integrating the weak pattern detection and bit flipping functionality directly into the memory controller of the non-volatile memory device. The device autonomously performs these operations without requiring external intervention, managing its own error prevention mechanisms and simplifying the overall system architecture while maintaining high reliability
Data Source
AI summary
An operating method of a non-volatile memory device, includes detecting first memory cells having the erase state among memory cells connected with a first word line; detecting second memory cells having sixth or seventh program states connected with a second word line adjacent to the first word line; detecting target bit lines including one of the first memory cells and one of the second memory cells; detecting target bits, corresponding to a target bit line and the erase state, in write data which is to be programmed in third memory cells connected with a third word line adjacent to the second word line; generating flip bit position data based on the target bits; flipping the target bits of the write data to generate flipped data; and programming the flipped data and the flip bit position data in the third word line.