3D Memory Array Stacking to Shorten Bit Lines and Save Chip Area

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Solution Overview

Problem

Existing semiconductor memory devices face challenges in reducing the space factor of control circuits in three-dimensional memory arrays, leading to increased bit line length and capacity, which affects operation speed and chip area efficiency.

Innovation Solution

The semiconductor memory device integrates a three-dimensionally structured array chip without a substrate, where a circuit chip with a control circuit is stacked on top, connected via bonding metals and interconnection layers, allowing direct bit line and word line lead-outs to the control circuit, reducing interconnect length and chip area requirements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If the control circuit is provided right under the three-dimensional memory array to reduce space factor, then the chip area efficiency is improved, but the bit lines become substantially long causing increased bit line capacity and reduced operation speed

Engineering Contradiction:
Improvechip area efficiencyVSAvoidoperation speed
Core Design Contradiction:
Area of stationary objectVSSpeed

Solution Approach 1:

The patent transitions from a planar layout where control circuits are positioned under the array to a three-dimensional stacked architecture. The array chip and circuit chip are bonded together vertically, allowing bit lines to be led out directly to the control circuit in the stacked configuration, thereby reducing bit line length while maintaining compact chip area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Area of stationary object

If the control circuit is provided right under the three-dimensional memory array, then the space factor is reduced, but deep contact formation requires additional regions and increases manufacturing complexity

Engineering Contradiction:
Improvespace factorVSAvoidmanufacturing complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent divides the memory device into two separate chips: an array chip containing the three-dimensional memory array and a circuit chip containing the control circuit. This segmentation eliminates the need for deep contact formation through the array structure, simplifying the manufacturing process while achieving compact space utilization through vertical stacking.

Inventive Principle:
Principle #1Segmentation

3Area of stationary object

If bit lines are substantially long in the conventional configuration, then the chip area is efficiently utilized, but the bit line capacity increases and affects operation speed

Engineering Contradiction:
Improvechip area utilizationVSAvoidbit line capacity
Core Design Contradiction:
Area of stationary objectVSQuantity of substance

Solution Approach 1:

By stacking the array chip and circuit chip vertically and bonding their surfaces, the patent creates a three-dimensional configuration where bit lines can be directly connected to the control circuit without extending across the entire chip area. This dimensional change reduces bit line length and capacity while maintaining efficient chip area utilization.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS11871576B2Semiconductor memory device including integrated control circuit and solid-state drive controller
Publication Date: 2024.01.09 KIOXIA CORP
  • US11871576B2 patent drawing
  • US11871576B2 patent drawing
  • US11871576B2 patent drawing

AI summary

According to one embodiment, the array chip includes a three-dimensionally disposed plurality of memory cells and a memory-side interconnection layer connected to the memory cells. The circuit chip includes a substrate, a control circuit provided on the substrate, and a circuit-side interconnection layer provided on the control circuit and connected to the control circuit. The circuit chip is stuck to the array chip with the circuit-side interconnection layer facing to the memory-side interconnection layer. The bonding metal is provided between the memory-side interconnection layer and the circuit-side interconnection layer. The bonding metal is bonded to the memory-side interconnection layer and the circuit-side interconnection layer.