3D Memory Bridge Structure With Variable Insulator Column Diameters
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Solution Overview
Problem
Semiconductor storage devices with three-dimensional memory cell arrays face challenges in maintaining high reliability while ensuring voltage controllability of word lines, particularly due to increased resistance in bridge areas which can lead to deteriorated voltage control and operational speed.
Innovation Solution
The semiconductor storage device incorporates a unique structure with varying diameters of insulator columns in bridge and step areas, where the insulator columns in the bridge area have a smaller diameter than those in the step area, reducing electrical resistance without widening the bridge area, thus facilitating faster voltage control and maintaining reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the bridge area is widened to reduce resistance, then electrical resistance decreases, but device area increases
Solution Approach 1:
The insulator column diameter is varied locally based on position: columns in the bridge area have smaller diameters than those in the step area. This local differentiation reduces resistance in the bridge area without requiring overall area expansion, resolving the contradiction between voltage controllability and device area.
Solution Approach 2:
The diameter parameter of insulator columns is changed according to spatial location. By reducing the diameter parameter in the bridge area specifically, electrical resistance is decreased while maintaining compact overall dimensions, addressing both voltage controllability and area constraints.
2Speed
If insulator column diameter is reduced to decrease resistance, then voltage control speed improves, but structural stability may deteriorate
Solution Approach 1:
Different insulator column diameters are assigned to different functional regions: smaller diameters in the bridge area for fast voltage control, and larger diameters in the step area for structural stability. This spatial differentiation resolves the contradiction between speed and stability.
Solution Approach 2:
The insulator column array is segmented into different groups based on location (bridge area vs. step area), with each group having optimized diameter for its specific function. This segmentation allows simultaneous optimization of voltage control speed and structural stability.
Data Source
AI summary
A device includes a first region including first semiconductor pillars extending through first conductive layers; a second region including second semiconductor pillars extending through second conductive layers; and a third region disposed between the first region and the second region and including insulator columns extending through third conductive layers. The third region includes a fourth region and a fifth region. In the fourth region, one third conductive layer electrically connects one first conductive layer and one second conductive layer to each other, and in the fifth region, one third conductive layer is connected to a contact plug. A first diameter of a first subset of the insulator columns provided in the fourth region is smaller than a second diameter of a second subset of the insulator columns provided in the fifth region.